Search for dissertations about: "EPITAXIAL GE"

Showing result 1 - 5 of 17 swedish dissertations containing the words EPITAXIAL GE.

  2. 1. UHV-CVD growth of Ge/Si nanostructures

    Author : Vilma Zela; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Semiconductory physics; Fysik; Physics; Naturvetenskap; Si; Ge; Esaki diode; Halvledarfysik; Ge layer; Natural science; Ge Ilands; posiotioning;

    Abstract : This thesis is based on the results concerning the epitaxial growth and characterization of silicon (Si) and germanium (Ge) nanostructures. The growth technique was the Ultra High Vacuum Chemical Vapor Deposition (UHV-CVD) that works in relatively low temperatures and low growth pressures. READ MORE

  4. 2. Germanium layer transfer and device fabrication for monolithic 3D integration

    Author : Ahmad Abedin; Mikael Östling; Cor Claeys; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Monolithic; sequential; 3D; silicon; germanium; wafer bonding; etch back; germanium on insulator; GOI; Ge pFET; low temperature; Sipassivation; pn junction; Kisel; germanium; epitaxi; selektiv; pn-övergång; germanium påisolator; GOI; Ge PFET; bonding; monolitisk; sekventiell; tre dimensionell; 3D; lågtemperarad;

    Abstract : Monolithic three-dimensional (M3D) integration, it has been proposed,can overcome the limitations of further circuits’ performance improvementand functionality expansion. The emergence of the internet of things (IoT) isdriving the semiconductor industry toward the fabrication of higher-performancecircuits with diverse functionality. READ MORE

  5. 3. Applications of Si1-xGex alloys for Ge devices and monolithic 3D integration

    Author : Konstantinos Garidis; Per-Erik Hellström; Mikael Östling; Sten Vollebregt; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon; germanium; epitaxy; selective; pn junction; germanium on insulator; GOI; Ge PFET; bonding; monolithic; sequential; three dimensional; 3D; low temperature; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : As the semiconductor industry moves beyond the 10 nm node, power consumption constraints and reduction of the negative impact of parasitic elements become important. Silicon germanium (Si1−xGex) alloys have been used to amplify the performance of Si based devices and integrated circuits (ICs) for decades. READ MORE

  6. 4. Thin Mn silicide and germanide layers studied by photoemission and STM

    Author : Joakim Hirvonen Grytzelius; Lars Johansson; Hanmin Zhang; Leif Johansson; Karlstads universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Semiconductor surfaces; Si 111 ; Ge 111 ; manganese; Mn; silicides; germanides; atomic structure; electronic structure; magnetic properties; LEED; ARPES; XPS; core-level spectroscopy; STM; STS; XMCD; Physics; Fysik;

    Abstract : The research presented in this thesis concerns experimental studies of thin manganese silicide and germanide layers, grown by solid phase epitaxy on the Si(111)7×7 and the Ge(111)c(2×8) surfaces, respectively. The atomic and electronic structures, as well as growth modes of the epitaxial Mn-Si and Mn-Ge layers, were investigated by low-energy electron diffraction (LEED), angle-resolved photoelectron spectroscopy (ARPES), core-level spectroscopy (CLS), and scanning tunneling microscopy and spectroscopy (STM and STS). READ MORE

  7. 5. Thin film growth and characterization of Ti-(Si,Ge)-C compounds

    Author : Per Eklund; Linköpings universitet; []
    Keywords : NATURAL SCIENCES; NATURVETENSKAP;

    Abstract : This thesis describes growth by de magnetron sputtering of thin film Ti-Si-C and Ti-Ge-C materials, with an emphasis on the deposition conditions for nanocomposite and epitaxial growth at low and high temperature processing, respectively. In the Ti-Si-C materials system, I have synthesized nanocomposite thin films from a Ti3SiC2 compound target in an Ar discharge on Si(100), Al2O3(0001), and Al substrates at low substrate temperature (300 oC and below). READ MORE