Search for dissertations about: "Electro-Thermal Simulations"
Found 5 swedish dissertations containing the words Electro-Thermal Simulations.
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1. Electro-thermal simulations and measurements of silicon carbide power transistors
Abstract : The temperature dependent electrical characteristics of silicon carbide power transistors – 4H-SiC metal semiconductor field-effect transistors (MESFETs) and 4H-SiC bipolar junction transistors (BJTs) have been investigated through simulation and experimental approaches. Junction temperatures and temperature distributions in devices under large power densities have been estimated. READ MORE
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2. Thermal Modelling of Power Modules in a Hybrid Vehicle Application
Abstract : Hybrid electric and full electric vehicles have attracted growing attention during the last decade. This is a consequence of several factors, such as growing environmental concerns, increasing oil prices and a strive for oil independency. READ MORE
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3. Simulation and Optimization of SiC Field Effect Transistors
Abstract : Silicon Carbide (SiC) is a wide band-gap semiconductor material with excel-lent material properties for high frequency, high power and high temperature elec-tronics. In this work different SiC field-effect transistors have been studied using theoretical methods, with the focus on both the devices and the methods used. READ MORE
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4. On Modeling and Optimal Control of Modular Batteries: Thermal and State-of-Charge Balancing
Abstract : There has in recent years been an increasing interest in battery-powered electrified vehicles (xEVs) to reduce carbon footprint of transportation and the dependence on fossil fuels. Since the battery pack of xEVs is one of the most expensive but a key component in the powertrain, the battery lifetime is an important factor for the success of xEVs. READ MORE
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5. On Reliability of SiC Power Devices in Power Electronics
Abstract : Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1. READ MORE