Search for dissertations about: "Electro-thermal simulation"
Showing result 1 - 5 of 6 swedish dissertations containing the words Electro-thermal simulation.
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1. Electrothermal Simulation in a Concurrent Waveform Relaxation Based Circuit Simulator
Abstract : The main purpose of this work is to study methods to simulate electro-thermal effects in integrated circuits using CONCISE a waveform relaxation based circuit simulator. WR is a method that is suitable to run on a multi-computer with state of the art computing power. Especially CMOS VLSI circuits have been simulated successfully with WR. READ MORE
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2. Electro-thermal simulations and measurements of silicon carbide power transistors
Abstract : The temperature dependent electrical characteristics of silicon carbide power transistors – 4H-SiC metal semiconductor field-effect transistors (MESFETs) and 4H-SiC bipolar junction transistors (BJTs) have been investigated through simulation and experimental approaches. Junction temperatures and temperature distributions in devices under large power densities have been estimated. READ MORE
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3. Modelling of Terahertz Planar Schottky Diodes
Abstract : This thesis deals with the modelling of THz planar Schottky diodes, focusing on analyses of the geometry- dependent parasitics and the diode chip thermal management. Moving towards higher operating frequencies, the electromagnetic couplings pose significant limitations on the diode performance. READ MORE
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4. Thermal Modelling of Power Modules in a Hybrid Vehicle Application
Abstract : Hybrid electric and full electric vehicles have attracted growing attention during the last decade. This is a consequence of several factors, such as growing environmental concerns, increasing oil prices and a strive for oil independency. READ MORE
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5. Simulation and Optimization of SiC Field Effect Transistors
Abstract : Silicon Carbide (SiC) is a wide band-gap semiconductor material with excel-lent material properties for high frequency, high power and high temperature elec-tronics. In this work different SiC field-effect transistors have been studied using theoretical methods, with the focus on both the devices and the methods used. READ MORE