Search for dissertations about: "Electronic structure of intrinsic and doped silicon carbide and silicon"
Found 3 swedish dissertations containing the words Electronic structure of intrinsic and doped silicon carbide and silicon.
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1. Electronic Structure of intrinsic and doped Silicon Carbide and Silicon
Abstract : Silicon (Si) is the most exploited material within the semiconductor device technology, mainly due to its relatively good electron and hole mobilities and the simplicity to fabricate and process the material. Silicon carbide (SiC) has, however, a wider band gap, a higher breakdown electric field strength, and a higher thermal conductivity, which makes SiC one of the most promising materials for high-power devices. READ MORE
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2. High power bipolar junction transistors in silicon carbide
Abstract : As a power device material, SiC has gained remarkable attention to its high thermal conductivity and high breakdown electric field. SiC bipolar junction transistors (BJTs) are interesting for applications as power switch for 600 V-1200 V applications. READ MORE
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3. Electron paramagnetic resonance study of defects in SiC
Abstract : Silicon carbide (SiC) is a wide bandgap semiconductor (energy gap of 3.26 eV and 3.03 eV for 4Hand 6H-SiC, respectively). With outstanding physical and electronic properties, SiC is a promising material for high-power, high-frequency and high-temperature applications. READ MORE
