Search for dissertations about: "Erik Janzén"

Showing result 1 - 5 of 22 swedish dissertations containing the words Erik Janzén.

  2. 1. Controlled growth of hexagonal GaN pyramids and InGaN QDs

    Author : Anders Lundskog; Erik Janzén; Urban Forsberg; Per-Olof Holtz; Lars-Erik Wernersson; Linköpings universitet; []
    Keywords : ;

    Abstract : Gallium-nitride (GaN) and its related alloys are direct band gap semiconductors, with a wide variety of applications. The white light emitting diode (LED) is of particular importance as it is expected to replace energy inefficient light bulb and hazardous incandescent lamps used today. READ MORE

  4. 2. Microwave Power Devices and Amplifiers for Radars and Communication Systems

    Author : Sher Azam; Qamar ul Wahab; Erik Janzén; Georg Boeck; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Semiconductor physics; Halvledarfysik;

    Abstract : SiC MESFETs and GaN HEMTs posses an enormous potential in power amplifiers at microwave frequencies due to their wide bandgap features of high electric field strength, high electron saturation velocity and high operating temperature. The high power density combined with the comparably high impedance attainable by these devices also offers new possibilities for wideband power microwave systems. READ MORE

  5. 3. Deep levels in SiC

    Author : Franziska C. Beyer; Erik Janzén; Carl Hemmingsson; Jörg Weber; Linköpings universitet; []
    Keywords : NATURAL SCIENCES; NATURVETENSKAP;

    Abstract : Silicon carbide (SiC) has been discussed as a promising material for high power bipolar devices for almost twenty years. Advances in SiC crystal growth especially the development of chemical vapor deposition (CVD) have enabled the fabrication of high quality material. READ MORE

  6. 4. Carrier Lifetime Relevant Deep Levels in SiC

    Author : Ian Don Booker; Einar Sveinbjörnsson; Erik Janzén; Anthony Peaker; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Silicon carbide; Deep level transient spectroscopy; Deep level; Carrier lifetime; Time-resolved photoluminescence;

    Abstract : Silicon carbide (SiC) is currently under development for high power bipolar devices such as insulated gate bipolar transistors (IGBTs). A major issue for these devices is the charge carrier lifetime, which, in the absence of structural defects such as dislocations, is influenced by point defects and their associated deep levels. READ MORE

  7. 5. Electron paramagnetic resonance study of defects in SiC

    Author : Patrick Carlsson; Nguyen Tien Son; Erik Janzén; Evan R. Glaser; Linköpings universitet; []
    Keywords : NATURAL SCIENCES; NATURVETENSKAP;

    Abstract : Silicon carbide (SiC) is a wide bandgap semiconductor (energy gap of 3.26 eV and 3.03 eV for 4Hand 6H-SiC, respectively). With outstanding physical and electronic properties, SiC is a promising material for high-power, high-frequency and high-temperature applications. READ MORE