Search for dissertations about: "FET noise model"

Showing result 1 - 5 of 6 swedish dissertations containing the words FET noise model.

  1. 1. Experimentally Based HFET Modeling for Microwave and Millimeter Wave Applications

    Author : Mikael Garcia; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MODFET; soft-breakdown; cold FET; large-signal; source balance; SDHT; dispersion; noise figure; temperature noise model; small-signal; TEGFET; direct extraction; Chalmers model; noise parameters; modeling; HEMT; HFET; noise;

    Abstract : Transistor models are very important in the design of Monolithic Microwave Integrated Circuits (MMICs). Circuit simulations based on accurate transistor models are one of the keys to high circuit yield. Transistor models can also be used to trace problems in the device fabrication processes. READ MORE

  2. 2. Microwave FET Modeling and Applications

    Author : Christian Fager; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MESFET; uncertainty; model; FMCW; statistical; HEMT; small-signal; extraction; distortion; intermodulation; CMOS; LDMOS; power amplifier; estimation; FET; large-signal; radar; AM noise;

    Abstract : This thesis deals with three distinct topics within the areas of modeling, analysis and circuit design with microwave field effect transistors (FETs). First, the extraction of FET small-signal model parameters is addressed. READ MORE

  3. 3. Cryogenic low noise amplifiers for microwave frequencies

    Author : Jianguo Xu; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MODFET; cryogenic; millimeter-wave; low-noise amplifier; FET noise model; microwave; TEGFET; HEMT; noise measurement; HFET; computer-aided design;

    Abstract : .... READ MORE

  4. 4. Characterisation and Modelling of Graphene FETs for Terahertz Mixers and Detectors

    Author : MICHAEL ANDERSSON; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; graphene; millimetre and submillimetre waves; power detectors; nonlinear device modelling; microwave amplifiers; nanofabrication; integrated circuits; noise modelling; Field-effect transistors FETs ; terahertz detectors; Volterra; subharmonic resistive mixers;

    Abstract : Graphene is a two-dimensional sheet of carbon atoms with numerous envisaged applications owing to its exciting properties. In particular, ultrahigh-speed graphene field effect transistors (GFETs) are possible due to the unprecedented carrier velocities in ideal graphene. READ MORE

  5. 5. Characterisation and modelling of graphene FET detectors for flexible terahertz electronics

    Author : Xinxin Yang; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; sensors; arrays; scattering parameters; broadband characterisation; graphene; terahertz detectors; field-effect transistors; flexible electronics;

    Abstract : Low-cost electronics for future high-speed wireless communication and non-invasive inspection at terahertz frequencies require new materials with advanced mechanical and electronic properties. Graphene, with its unique combination of flexibility and high carrier velocity, can provide new opportunities for terahertz electronics. READ MORE