Search for dissertations about: "Field-effect transistors FETs"

Showing result 1 - 5 of 20 swedish dissertations containing the words Field-effect transistors FETs.

  1. 1. Silicon Nanowire Field-Effect Devices as Low-Noise Sensors

    University dissertation from Uppsala : Acta Universitatis Upsaliensis

    Author : Xi Chen; Uppsala universitet.; [2019]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon nanowire; field-effect transistor; Schottky junction gate; low frequency noise; ion sensor; Teknisk fysik med inriktning mot elektronik; Engineering Science with specialization in Electronics;

    Abstract : In the past decades, silicon nanowire field-effect transistors (SiNWFETs) have been explored for label-free, highly sensitive, and real-time detections of chemical and biological species. The SiNWFETs are anticipated for sensing analyte at ultralow concentrations, even at single-molecule level, owing to their significantly improved charge sensitivity over large-area FETs. READ MORE

  2. 2. Microwave characterisation of electrodes and field effect transistors based on graphene

    University dissertation from Uppsala : Acta Universitatis Upsaliensis

    Author : MICHAEL ANDERSSON; [2014]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Graphene; graphene electrodes; microwave amplifiers; noise measurements; microwave FETs; CVD graphene; noise modelling; FBARs.; nanofabrication; subharmonic resistive mixers; small-signal FET modelling;

    Abstract : The isolation of the two-dimensional material graphene, a single hexagonal sheet of carbon atoms, is believed to trigger a revolution in electronics. Theory predicts unprecedented carrier velocities in ideal graphene, from which ultrahigh speed graphene field effect transistors (GFETs) are envisioned. READ MORE

  3. 3. Selectivity Enhancement of Gas Sensitive Field Effect Transistors by Dynamic Operation

    University dissertation from Linköping, Sweden / Aachen, Germany : Linköping University Electronic Press / Shaker Verlag

    Author : Christian Bur; Linköpings universitet.; Linköpings universitet.; [2015]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : Gas sensitive field effect transistors based on silicon carbide, SiC-FETs, have been applied to various applications mainly in the area of exhaust and combustion monitoring. So far, these sensors have normally been operated at constant temperatures and adaptations to specific applications have been done by material and transducer platform optimization. READ MORE

  4. 4. Characterisation and Modelling of Graphene FETs for Terahertz Mixers and Detectors

    University dissertation from Linköping, Sweden / Aachen, Germany : Linköping University Electronic Press / Shaker Verlag

    Author : MICHAEL ANDERSSON; [2016]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; graphene; millimetre and submillimetre waves; power detectors; nonlinear device modelling; microwave amplifiers; nanofabrication; integrated circuits; noise modelling; Field-effect transistors FETs ; terahertz detectors; Volterra; subharmonic resistive mixers;

    Abstract : Graphene is a two-dimensional sheet of carbon atoms with numerous envisaged applications owing to its exciting properties. In particular, ultrahigh-speed graphene field effect transistors (GFETs) are possible due to the unprecedented carrier velocities in ideal graphene. READ MORE

  5. 5. Design and process issues of junction- and ferroelectric-field effect transistors in silicon carbide

    University dissertation from Kista : Mikroelektronik och informationsteknik

    Author : Sang-Mo Koo; KTH.; [2003]
    Keywords : ;

    Abstract : In today’s solid-state electronics, Si and SiO2 are thedominant materials used. However, new materials such as SiC orferroelectrics are required for some special applications sincesuperior characteristics can be achieved in electronic devices. READ MORE