Search for dissertations about: "Field-effect transistors FETs"
Showing result 11 - 15 of 25 swedish dissertations containing the words Field-effect transistors FETs.
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11. Nanowire Transistors and RF Circuits for Low-Power Applications
Abstract : The background of this thesis is related to the steadily increasing demand of higher bandwidth and lower power consumption for transmitting data. The work aims at demonstrating how new types of structures, at the nanoscale, combined with what is referred to as exotic materials, can help benefit in electronics by lowering the consumed power, possibly by an order of magnitude, compared to the industry standard, silicon (Si), used today. READ MORE
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12. On the Road to Graphene Biosensors
Abstract : Biosensors are devices that detect biological elements and then transmit a readable signal. Biosensors can automatize diagnostics that would otherwise have to be performed by a physician or perhaps not be possible to perform at all. Current biosensors are however either limited to particular diseases or prohibitively expensive. READ MORE
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13. Low-Power Nanowire Circuits and Transistors
Abstract : This thesis explores several novel material systems and innovative device concepts enabled by nanowire technology. State-of-the-art fabrication techniques such as electron beam lithography and atomic layer deposition are utilized to achieve high control and quality in the device fabrication. READ MORE
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14. Electronic Transport in Polymeric Solar Cells and Transistors
Abstract : The main topic of this dissertation is electronic charge transport in polymeric and molecular organic materials and material blends intended for solar cell applications. Charge transport in polymers is a strange beast and carrier mobility is rarely a well-defined number. READ MORE
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15. Electron Transport in Nanowire Quantum Devices
Abstract : This thesis focuses on electron transport in semiconductor InAs/InP and InSb nanowire quantum devices. However, first the temperature dependence of classical charge transport in InSb nanowire field-effect transistors, FETs, is characterized, using InAs nanowire FETs as a reference. READ MORE