Search for dissertations about: "GAN"

Showing result 1 - 5 of 153 swedish dissertations containing the word GAN.

  2. 1. Corneal cellular proliferation and wound healing

    Author : Lisha Gan; Karolinska Institutet; Karolinska Institutet; []
    Keywords : cornea; cell proliferation; wound healing; stem-cells; leukocytes; PCNA; hyaluronan; alkali injury; photorefractive keratectomy;

    Abstract : Background: Cellular proliferation plays an important role in both physiological and pathological processes. Epithelial hyperplasia in the epithelium, excessive scar formation in retrocorneal membrane formation and neovascularization are examples of excessive proliferation of cornea cells. Lack of proliferative ability causes corneal degeneration. READ MORE

  4. 2. GaN/AlN Multiple Quantum Well Structures

    Author : Xinju Liu; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; GaN; AlN; multiple quantum well; Molecular beam epitaxy; Si 111 ; intersubband transition; sapphire; GaN template;

    Abstract : The III-nitride semiconductors: InN, GaN and AlN are promising for photonic, high power and high temperature electronic devices. Their large and direct band gaps cover the range 0.7 to 6.2 eV, i. READ MORE

  5. 3. Regulation of vascular function by fluid mechanical forces. Development of a new vascular experimental platform for integrative physiological and molecular biological studies of living conduit vessels

    Author : Li-Ming Gan; Göteborgs universitet; []
    Keywords : MEDICIN OCH HÄLSOVETENSKAP; MEDICAL AND HEALTH SCIENCES; perfusion model; endothelium; smooth muscle cells; shear stress; pressure; nitric oxide; endothelin-1; vascular endothelial growth factor; c-jun; c-fos; real-time PCR; NO probe.;

    Abstract : The vascular endothelium is a multifunctional interface between blood flow and target organs and is continuously exposed to fluid mechanical forces such as shear stress, compressive, and tensile forces. Both in vivo and in vitro data indicate that biomechanical forces exert important modulating effects on key vascular functions. READ MORE

  6. 4. Processing, Characterization and Modeling of AlGaN/GaN HEMTs

    Author : Vincent Desmaris; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN; HEMT; III-Nitride processing; microwave modeling; AlGaN GaN; HFET; heterojunction field effect transistor; microwave devices; III-Nitride; Schottky diodes; Gallium nitride; resistive mixer; high electron mobility transistor; wide bandgap;

    Abstract : III-Nitrides electronic properties make them currently the materials of choice for high-power high-frequency applications. Their wide bandgaps, high breakdown fields, the high electron peak and saturation velocities combined with the large conduction band offset and the high electron mobility observed in AlGaN/GaN heterostructures enable excellent microwave power performance of AlGaN/GaN high electron mobility transistors (HEMTs). READ MORE

  7. 5. Molecular beam epitaxy growth and characterization of GaN, AlN and AlGaN/GaN heterostructures

    Author : Stefan Davidsson; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; two-dimensional electron gas; MBE; Al2< sub>O3< sub>; epitaxial growth; III-nitride; molecular beam epitaxy; GaN; nucleation layer; nitridation; AlGaN; HFET; 2DEG density; AlN; 2DEG; buffer layer; sapphire; 2DEG mobility; heterostructure field effect transistor;

    Abstract : The III-nitride materials, consisting of Al, Ga, In and N, have several physical properties that make them attractive for semiconductor devices in electronic and optic applications. A wide range of direct energy bandgaps (0.7 eV - 6.1 eV) can be obtained. READ MORE