Search for dissertations about: "GaAs 111 A"

Showing result 1 - 5 of 14 swedish dissertations containing the words GaAs 111 A.

  2. 1. Photoelectron Spectroscopy Studies of III-V Semiconductor Systems

    Author : Henric Åsklund; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; low temperature MBE; GaAs 111 A; InAs; core-level; GaMnAs; photoelectron spectroscopy; MEE; GaAs; InP 110 :As; valence-band; core-exciton; diluted magnetic semiconductor; MBE; interface; III-V semiconductor; surface; InAs 111 A; thin films;

    Abstract : Photoelectron spectroscopy has been used as a main tool to study a number of III-V semiconductor surfaces. This thesis includes studies of a surface reaction, As/InP(110), thin heteroepitaxial layers, InAs on GaAs(111)A and GaAs on AlAs(100), and a diluted magnetic semiconductor, Ga1-xMnxAs. READ MORE

  4. 2. Adventures of III-V Semiconductor Surfaces

    Author : Sandra Benter; NanoLund: Centre for Nanoscience; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; III-V; semiconductor surfaces; Bismuth; InAs; GaAs; droplets; STM; XPS; XPEEM; ARPES; Fysicumarkivet A:2023:Benter;

    Abstract : Tailoring the surface composition and morphology of materials to enable new electronic devices is important for a wide range of applications such as quantum computing or spintronics. A fundamental understanding of the changes induced in the surface during different process steps can help to establish new synthesis routes as well as devices. READ MORE

  5. 3. Atomic and Electronic Structure of III-V Semiconductor Surfaces

    Author : Örjan Olsson; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; semiconductor; GaAs; photoelectron; scanning tunneling microscopy; valence band; core level; reconstruction; InAs; surface; InSb;

    Abstract : The atomic and electronic structure of clean and Cs-perturbed III-V semiconductors was studied by angle-resolved photoelectron spectroscopy (ARPES), surface core level spectroscopy (SCLS), and scanning tunneling microscopy (STM). The work can be divided into three parts, dealing with low-index sur-faces, high-index surfaces, and special features of InAs. READ MORE

  6. 4. Epitaxial growth of semiconductor nanowires

    Author : Ann Persson; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; materialteknik; nanowires; nanostructures; growth mechanism; Materiallära; Material technology; Halvledarfysik; Semiconductory physics; nanoelectronics; Au; VSS; VLS; surface diffusion; band gap engineering; InP; ternary system; GaAs; heterostructures; InAs; CBE; epitaxy;

    Abstract : This thesis describes the results obtained from investigations carried out on epitaxially grown III-V semiconductor nanowires aimed at improving our understanding of and knowledge on the growth mechanism of nanowires. This is important to be able to control their growth, in order to make future applications possible. READ MORE

  7. 5. Photoelectron spectroscopy on III-V semiconductors : valence bands, core levels and core excitons

    Author : Henric Oscarsson; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; InP 110 :As; surface; InAs; valence band; MBE; photoelectron spectroscopy; core level; core exciton; semiconductor; GaAs 111 A;

    Abstract : .... READ MORE