Search for dissertations about: "GaAs AlGaAs"

Showing result 1 - 5 of 38 swedish dissertations containing the words GaAs AlGaAs.

  1. 1. DX Centers in AlGaAs

    University dissertation from Department of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden

    Author : Yingbo Jia; [1996]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; DX center; AlGaAs; GaAs AlGaAs multi-layer structures; C-V; DLTS; electric field dependence; positive-U and negative-U models; Schottky diodes; Halvledarfysik; Fysicumarkivet A:1996:Jia; Semiconductory physics; silicon; metastable states.;

    Abstract : This thesis presents a study of DX center related phenomena in silicon doped AlGaAs and in GaAs/AlGaAs multi-layer structures. A variety of experimental techniques such as capacitance-voltage (C-V), deep level transient spectroscopy (DLTS), single shot capacitance, thermally stimulated capacitance (TSCAP), admittance spectroscopy, photocapacitance, and photoconductivity have been used. READ MORE

  2. 2. Spectroscopic studies of III-V semiconductors in two, one and zero dimensions

    University dissertation from Solid State Physics, Lund University

    Author : Dan Hessman; [1996]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; InAs-InP; low-dimensional structures; quantum wells; quantum dots; quantum wires; k.p calculations; type-II; photoluminescence; V grooves; Stranski Krastanow; single dot spectroscopy; GaAs-InP; III-V semiconductors; Fysicumarkivet A:1996:Hessman; InAs-GaAs; GaInAs-InP; Halvledarfysik; InP-GaInP; Semiconductory physics;

    Abstract : In this thesis, spectroscopic studies of quantum wells (QWs), quantum wires (QWRs) and quantum dots (QDs) in III-V semiconductors are presented. The electronic structure of these low-dimensional structures have been studied by absorption, photocurrent, electroreflectance, photoluminescence (PL), and photoluminescence excitation (PLE) spectroscopy. READ MORE

  3. 3. Gallium arsenide based buried heterostructure laser diodes with aluminium-free semi-insulating materials regrowth

    University dissertation from Kista : Mikroelektronik och informationsteknik

    Author : Carlos Angulo Barrios; [2002]
    Keywords : semiconductor lasers; in-plane lasers; VCSELs; GaAs; GaInP; semi-insulating materials; hydride vapour phase epitaxy; regrowth; buried heterostructure; leakage current; simulation;

    Abstract : Semiconductor lasers based on gallium arsenide and relatedmaterials are widely used in applications such as opticalcommunication systems, sensing, compact disc players, distancemeasurement, etc. The performance of these lasers can beimproved using a buried heterostructure offering lateralcarrier and optical confinement. READ MORE

  4. 4. Tunneling Based Electronic Devices

    University dissertation from Solid State Physics, Lund University

    Author : Erik Lind; [2004]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiGe; Esaki Diodes; classical mechanics; quantum mechanics; relativity; termodynamik; relativitet; kvantmekanik; statistisk fysik; Matematisk och allmän teoretisk fysik; thermodynamics; gravitation; statistical physics; GaAs; Mathematical and general theoretical physics; Resonant Tunneling Permeable Base Transistors; Resonant Tunneling Diodes; klassisk mekanik; Fysicumarkivet A:2004:Lind;

    Abstract : This thesis concerns different kinds of tunneling based devices all showing negative differential resistance. The thesis is divided in three parts, resonant tunneling transistors, Esaki diodes and coupled zero dimensional systems. READ MORE

  5. 5. Electron Scattering Mechanisms in Low-Dimensional Transport Physics

    University dissertation from Solid State Physics, Lund University

    Author : Qin Wang; [1999]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; electron scattering mechanisms; mobility; scattering time; Coulomb scattering; alloy scattering; edge states; quantum Hall effect; SdH; conductance oscillations; quantized conductance; GaInAs InP; Low-dimensional structures; GaAs AlGaAs; Physics; Fysik; Fysicumarkivet A:1999:Wang;

    Abstract : Electron scattering mechanisms in low-dimensional semiconductor systems have been investigated at low temperatures. The influence of scatterers on magnetotransport in a high-mobility, GaAs/AlGaAs two-dimensional electron gas (2DEG) system was studied. READ MORE