Search for dissertations about: "GaInAs InP"

Showing result 1 - 5 of 10 swedish dissertations containing the words GaInAs InP.

  1. 1. Spectroscopic studies of III-V semiconductors in two, one and zero dimensions

    University dissertation from Solid State Physics, Lund University

    Author : Dan Hessman; Lund University.; Lunds universitet.; [1996]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; InAs-InP; low-dimensional structures; quantum wells; quantum dots; quantum wires; k.p calculations; type-II; photoluminescence; V grooves; Stranski Krastanow; single dot spectroscopy; GaAs-InP; III-V semiconductors; Fysicumarkivet A:1996:Hessman; InAs-GaAs; GaInAs-InP; Halvledarfysik; InP-GaInP; Semiconductory physics;

    Abstract : In this thesis, spectroscopic studies of quantum wells (QWs), quantum wires (QWRs) and quantum dots (QDs) in III-V semiconductors are presented. The electronic structure of these low-dimensional structures have been studied by absorption, photocurrent, electroreflectance, photoluminescence (PL), and photoluminescence excitation (PLE) spectroscopy. READ MORE

  2. 2. Zeeman Interaction in Low-Dimensional III-V Semiconductor Structures

    University dissertation from Solid State Physics, Lund University

    Author : Bernhard Kowalski; Lund University.; Lunds universitet.; [1997]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; optically detected spin resonance; spin resonance; effective g-value; III-V semiconductors; low-dimensional structures; quantum wells; quantum dots; Stranski-Krastanow; photoluminescence; GaInAs; single dot Magneto-luminescence; Fysicumarkivet A:1997:Kowalski; Halvledarfysik; Semiconductory physics; GaInAs-InP;

    Abstract : The Zeeman interaction in low-dimensional III-V semiconductor nanostructures is studied. The effective g-value of bulk InGaAs is measured by two different spin resonance techniques. Experimental conditions were found to control the Overhauser effect, thus enabling a highly accurate determination of the g-value, g* = -4.070 ± 0. READ MORE

  3. 3. Quantum and Ballistic Nanodevices

    University dissertation from Division of Solid State Physics, Lund University, Box 118, SE-221 00 Lund, Sweden

    Author : Ivan Shorubalko; Lund University.; Lunds universitet.; [2003]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; III-V semiconductors; low-dimensional structures; nanostructures; ballistic rectifiers; three-terminal ballistic junctions; quantum wires; planar quantum dots; logic gates; harmonic generation; InP; GaInAs; nanoelectronics; Fysik; Physics; nonlinear transport; electron transport; quantum nanodevices; ballistic nanodevices; Fysicumarkivet A:2003:Shorubalko;

    Abstract : In this thesis, electron transport in quantum and ballistic devices was studied. The devices studied here were quantum wires, planar quantum dots, ballistic rectifiers, artificial functional materials, and three-terminal ballistic junctions. The possible application of such devices in the future nanoelectronics was also investigated. READ MORE

  4. 4. Electron Scattering Mechanisms in Low-Dimensional Transport Physics

    University dissertation from Solid State Physics, Lund University

    Author : Qin Wang; [1999]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; electron scattering mechanisms; mobility; scattering time; Coulomb scattering; alloy scattering; edge states; quantum Hall effect; SdH; conductance oscillations; quantized conductance; GaInAs InP; Low-dimensional structures; GaAs AlGaAs; Physics; Fysik; Fysicumarkivet A:1999:Wang;

    Abstract : Electron scattering mechanisms in low-dimensional semiconductor systems have been investigated at low temperatures. The influence of scatterers on magnetotransport in a high-mobility, GaAs/AlGaAs two-dimensional electron gas (2DEG) system was studied. READ MORE

  5. 5. Long-wavelength vertical-cavity lasers based on InP/GaInAsp bragg reflectors

    University dissertation from Institutionen för elektronisk systemkonstruktion

    Author : Stefan Rapp; KTH.; [1999]
    Keywords : ;

    Abstract : Vertical-cavity surface-emitting lasers (VCSELs) operatingat long wavelength (1.3-1.55µm) are of great interest asinexpensive, high-performance light sources for opticalcommunication systems. READ MORE