Search for dissertations about: "GaN, InN, magnetron sputtering"

Found 3 swedish dissertations containing the words GaN, InN, magnetron sputtering.

2. 1. Self-Assembled and Selective-Area Growth of Group III-Nitride Semiconductor Nanorods by Magnetron Sputter Epitaxy

   Author : Elena Alexandra Serban; Ching-Lien Hsiao; Jens Birch; Per Persson; Lars Hultman; Eva Monroy; Linköpings universitet; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES;

   Abstract : The III-nitride semiconductor family includes gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), and the related ternary and quaternary alloys. The research interest on this group of materials is sparked by the direct bandgaps, and excellent physical and chemical properties. READ MORE

4. 2. Growth and Characterization of Metastable Wide Band-Gap Al1-xInxN Epilayers

   Author : Timo Seppänen; Robert F. Davis; Linköpings universitet; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; Thin film; Magnetron Sputter Epitaxy MSE ; Physics; Fysik;

   Abstract : InN to 6.2 eV for AlN, which opens possibilities to engineer opto-electronic devices operating from infra-red to deep ultra-violet wavelengths. Al1-xInxN with the alloy composition x~0.2 can also be used as a lattice-matched electron confinement layer for GaN based electronic devices. READ MORE

5. 3. Valence Electron Energy Loss Spectroscopy of III-Nitride Semiconductors

   Author : Justinas Pališaitis; Per Persson; Lars Hultman; Jens Birch; Vicki Keast; Linköpings universitet; []
   Keywords : ;

   Abstract : This doctorate thesis covers both experimental and theoretical investigations of the optical responses of the group III-nitrides (AlN, GaN, InN) and their ternary alloys. The goal of this research has been to explore the usefulness of valence electron energy loss spectroscopy (VEELS) for materials characterization of group III-nitride semiconductors at the nanoscale. READ MORE