Search for dissertations about: "GaN HEMTs"

Showing result 1 - 5 of 33 swedish dissertations containing the words GaN HEMTs.

  2. 1. Processing, Characterization and Modeling of AlGaN/GaN HEMTs

    Author : Vincent Desmaris; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN; HEMT; III-Nitride processing; microwave modeling; AlGaN GaN; HFET; heterojunction field effect transistor; microwave devices; III-Nitride; Schottky diodes; Gallium nitride; resistive mixer; high electron mobility transistor; wide bandgap;

    Abstract : III-Nitrides electronic properties make them currently the materials of choice for high-power high-frequency applications. Their wide bandgaps, high breakdown fields, the high electron peak and saturation velocities combined with the large conduction band offset and the high electron mobility observed in AlGaN/GaN heterostructures enable excellent microwave power performance of AlGaN/GaN high electron mobility transistors (HEMTs). READ MORE

  4. 2. Buffer Related Dispersive Effects in Microwave GaN HEMTs

    Author : Johan Bergsten; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; trapping effects; C-doping; AlGaN GaN interface quality; recessed ohmic contacts; GaN HEMT; buffer design;

    Abstract : In applications such as mobile communication and radar, microwave power generation at high frequency is of utmost importance. The GaN HEMT offers a unique set of properties that makes it suitable for high power amplification at high frequencies. READ MORE

  5. 3. Hot-wall MOCVD of N-polar group-III nitride materials and high electron mobility transistor structures

    Author : Hengfang Zhang; Vanya Darakchieva; Jr-Tai Chen; Ingemar Persson; Fatemeh (Shadi) Shahedipour-Sandvik; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Nitrogen-polar; MOCVD; III-nitride; GaN; AlN; C-face SiC; HEMTs;

    Abstract : Group III-Nitride semiconductors: indium nitride (InN), gallium nitride (GaN), aluminum nitride (AlN) and their alloys continue to attract significant scientific interest due to their unique properties and diverse applications in photonic and electronic applications. Group-III nitrides have direct bandgaps which cover the entire spectral range from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN). READ MORE

  6. 4. Nonlinear Characterization of Wideband Microwave Devices and Dispersive Effects in GaN HEMTs

    Author : Sebastian Gustafsson; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; large-signal; dispersive effects; electron trapping; thermal coupling; HEMT; GaN; microwave; wideband;

    Abstract : Measurements play a key role in the development of microwave hardware as they allow engineers to test and verify the RF performance on a system, circuit, and component level. Since modern cellular standards employ complex modulation formats with wider signal bandwidths to cope with the growing demand of higher datarates, nonlinear characterization using wideband stimuli is becoming increasingly important. READ MORE

  7. 5. High Frequency (MHz) Resonant Converters using GaN HEMTs and Novel Planar Transformer Technology

    Author : Hari Babu Kotte; kent Bertilsson; Bengt Oelmann; Noel Shammas; Torbjörn Thiringer; Per Karlsson; Mittuniversitetet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN HEMTs; MHz Frequency; Resonant Converters; Planar Transformer Technology;

    Abstract : The increased power consumption and power density demands of moderntechnologies have increased the technical requirements of DC/DC and AC/DC powersupplies. In this regard, the primary objective of the power supply researcher/engineeris to build energy efficient, high power density converters by reducing the losses andincreasing the switching frequency of converters respectively. READ MORE