Search for dissertations about: "GaN HEMTs"

Showing result 21 - 25 of 33 swedish dissertations containing the words GaN HEMTs.

2. 21. Oscillator design in III-V technologies

   Author : Szhau Lai; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MMIC; InGaP HBT; device model; mixer; Darlington pair; GaN HEMT; simulation; varactor; phase noise; CAD; switch mode.; VCO; Colpitts oscillator; low frequency noise;

   Abstract : The thesis treats the design of low phase noise oscillators/VCOs in GaAs/InGaP HBT and GaN HEMT technologies. The covered topics are: active device modeling, noise characterization, passive structures, phase noise models, simulation/measurement tools, circuit topologies, and design techniques. READ MORE

4. 22. Nonlinear Microwave Measurement Architectures for Wideband Device Characterization

   Author : Sebastian Gustafsson; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nonlinear characterization; wideband; GaN HEMT; oscilloscope; microwave; active load-pull;

   Abstract : The global surge for ubiquitous mobile communication requiring high speed and high capacity cellular networks has resulted in a golden age for the development of wireless technology. Modern cellular standards employ complex modulation formats with wider signal bandwidths to cope with the growing demand. READ MORE

5. 23. Wide Bandgap MMIC Technology

   Author : Mattias Sudow; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Wide bandgap; AlGaN GaN; SiC MMIC; SiC MESFET; SiC Schottky; Microwave;

   Abstract : Wide bandgap technology for microwave electronics has been an intense area of research during the last decade. With reas of application ranging from base station amplifiers to radar transceivers, this technology has the resources to be the basis for the next generation of high power microwave electronics. READ MORE

6. 24. P-type and polarization doping of GaN in hot-wall MOCVD

   Author : Alexis Papamichail; Vanya Darakchieva; Anelia Kakanakova-Gueorguieva; Jr-Tai Chen; Zhaoxia Bi; Linköpings universitet; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES;

   Abstract : The devolopment of group-III nitride semiconductor technology continues to expand rapidly over the last two decades. The indium nitride (InN), gallium nitride (GaN) and aluminum nitride (AlN) compounds and their alloys are direct bandgap semiconductors with a wide bandgap range, spanning from infrared(IR) to deep-ultraviolet (UV), enabling their utilization in optoelectronic industry. READ MORE

7. 25. Advanced Heterostructure Designs and Recessed Ohmic Contacts for III-Nitride-Based HEMTs

   Author : Johan Bergsten; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

   Abstract : Modern III-Nitride (III-N) heterostructures offer high mobility, high electron density, large breakdown voltages and good thermal capabilities. High electron mobility transistors (HEMT) based on III-Ns are therefore ideal for high frequency, high power amplification. The intended applications are within radar and mobile communication. READ MORE