Search for dissertations about: "GaN low noise"

Showing result 1 - 5 of 13 swedish dissertations containing the words GaN low noise.

  2. 1. GaN HEMT Low Frequency Noise Characterization for Low Phase Noise Oscillator Design

    Author : Thi Ngoc Do Thanh; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Low frequency noise; flicker noise; phase noise; deposition method.; oscillator; VCO; GaAs pHEMT; MMIC; GaN HEMT; passivation; InGaP HBT;

    Abstract : The thesis presents low frequency noise (LFN) characterization of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) for low phase noise oscillator design. First, GaN HEMT technology is benchmarked versus other transistor technologies, e.g. READ MORE

  4. 2. GaN HEMT Low Noise Amplifiers for Radio Base Station Receivers

    Author : Pirooz Chehrenegar; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; gallium nitride GaN ; radio base station receiver; cascode; high linearity; robustness.; cascade; high electron mobility transistor HEMT ; low noise; low noise amplifier;

    Abstract : Gallium nitride (GaN) high electron mobility transistor (HEMT) has been introduced as the technology of choice for high power microwave applications due to its material properties including high saturation electron velocity and breakdown field together with excellent thermal conductivity and robustness.It is also a promising candidate for receiver front-ends in the radio base station(RBS) where low noise figure and high linearity are key issues for low noiseamplifier (LNA) design. READ MORE

  5. 3. Optimum GaN HEMT Oscillator Design Targeting Low Phase Noise

    Author : Mikael Hörberg; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; low frequency noise; resonator coupling; cavity resonator; GaN HEMT; MMIC; reflection oscillator; phase noise;

    Abstract : The thesis considers design of low phase noise oscillators, given the boundary condition of the used technology. Important conditions are the power handling of the active device, device noise floor, the quality factor of the resonator, bias settings, and low frequency noise. READ MORE

  6. 4. Low Phase Noise GaN HEMT Oscillator Design based on High-Q resonators

    Author : Mikael Hörberg; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; resonator coupling; reflection oscillator; MMIC; phase noise; cavity resonator; low-frequency noise; GaN HEMT; MEMS;

    Abstract : The thesis considers the design and optimization of oscillators targeting low phase noise, given boundary conditions from the technology. Crucial technology figures are power capability, RF noise figure, low-frequency noise and the quality factor (Q-factor) of the resonator. READ MORE

  7. 5. GaN-based HEMTs for Cryogenic Low-Noise Applications

    Author : Mohamed Aniss Mebarki; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Cryogenic temperatures; superconductivity; RFI; High Electron Mobility Transistor HEMT ; Low Noise Amplifier LNA ; Niobium Nb ; Radio-astronomy; Gallium Nitride GaN ; high frequency;

    Abstract : Radio-astronomy deals with signals and radiations of extremely weak intensity. Also, it requires robust and rugged technologies able to sustain and prevent the Radio Frequency Interferences (RFI). READ MORE