Search for dissertations about: "GaN power"

Showing result 1 - 5 of 85 swedish dissertations containing the words GaN power.

2. 1. Wide Bandgap Semiconductor (SiC & GaN) Power Amplifiers in Different Classes

   Author : Sher Azam; Qamar Wahab; Jörgen Olsson; Linköpings universitet; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Wide bandgap; SiC; MESFET; GaN; HEMT; Power Amplifiers; Materials science; Teknisk materialvetenskap;

   Abstract : SiC MESFETs and GaN HEMTs have an enormous potential in high-power amplifiers at microwave frequencies due to their wide bandgap features of high electric breakdown field strength, high electron saturation velocity and high operating temperature. The high power density combined with the comparably high impedance attainable by these devices also offers new possibilities for wideband power microwave systems. READ MORE

4. 2. GaN/AlN Multiple Quantum Well Structures

   Author : Xinju Liu; Chalmers tekniska högskola; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; GaN; AlN; multiple quantum well; Molecular beam epitaxy; Si 111 ; intersubband transition; sapphire; GaN template;

   Abstract : The III-nitride semiconductors: InN, GaN and AlN are promising for photonic, high power and high temperature electronic devices. Their large and direct band gaps cover the range 0.7 to 6.2 eV, i. READ MORE

5. 3. High efficiency power amplifiers for wireless communications

   Author : Hossein Mashad Nemati; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; load modulation; GaN; supply modulation; LDMOS; efficiency; Power amplifier; MMIC; mHEMT; transmitter architecture;

   Abstract : This thesis presents state-of-the-art high efficiencyharmonically-tuned power amplifiers (PAs) and investigates thecharacteristics and potentials of such amplifiers in two of the mostpromising efficiency enhancement techniques, dynamic supply and load modulation.In this work, a 10 W LDMOS harmonically-tuned PA with 80% power-added-efficiency (PAE) isrealized at 1 GHz. READ MORE

6. 4. Theory and Design of Wideband Doherty Power Amplifiers

   Author : David Gustafsson; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Doherty; gallium nitride; GaN; power amplifier; MMIC; microwave; Broadband amplifiers; high efficiency; wideband;

   Abstract : The Doherty power amplifier (DPA) is one of the most popular power amplifier architectures for obtaining high average efficiency for modern communication signals with high peak-to-average power ratios (PAPR). However, the DPA suffers from often having narrowband performance which limits its capabilities in wideband and/or multi-standard microwave and radio frequency applications. READ MORE

7. 5. Processing, Characterization and Modeling of AlGaN/GaN HEMTs

   Author : Vincent Desmaris; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN; HEMT; III-Nitride processing; microwave modeling; AlGaN GaN; HFET; heterojunction field effect transistor; microwave devices; III-Nitride; Schottky diodes; Gallium nitride; resistive mixer; high electron mobility transistor; wide bandgap;

   Abstract : III-Nitrides electronic properties make them currently the materials of choice for high-power high-frequency applications. Their wide bandgaps, high breakdown fields, the high electron peak and saturation velocities combined with the large conduction band offset and the high electron mobility observed in AlGaN/GaN heterostructures enable excellent microwave power performance of AlGaN/GaN high electron mobility transistors (HEMTs). READ MORE