Search for dissertations about: "GaN properties"

Showing result 1 - 5 of 75 swedish dissertations containing the words GaN properties.

  1. 1. Processing, Characterization and Modeling of AlGaN/GaN HEMTs

    Author : Vincent Desmaris; Chalmers University of Technology; []
    Keywords : TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ENGINEERING AND TECHNOLOGY; ENGINEERING AND TECHNOLOGY; GaN; HEMT; III-Nitride processing; microwave modeling; AlGaN GaN; HFET; heterojunction field effect transistor; microwave devices; III-Nitride; Schottky diodes; Gallium nitride; resistive mixer; high electron mobility transistor; wide bandgap;

    Abstract : III-Nitrides electronic properties make them currently the materials of choice for high-power high-frequency applications. Their wide bandgaps, high breakdown fields, the high electron peak and saturation velocities combined with the large conduction band offset and the high electron mobility observed in AlGaN/GaN heterostructures enable excellent microwave power performance of AlGaN/GaN high electron mobility transistors (HEMTs). READ MORE

  2. 2. Molecular beam epitaxy growth and characterization of GaN, AlN and AlGaN/GaN heterostructures

    Author : Stefan Davidsson; Chalmers University of Technology; []
    Keywords : two-dimensional electron gas; MBE; Al2O3; epitaxial growth; III-nitride; molecular beam epitaxy; GaN; nucleation layer; nitridation; AlGaN; HFET; 2DEG density; AlN; 2DEG; buffer layer; sapphire; 2DEG mobility; heterostructure field effect transistor;

    Abstract : The III-nitride materials, consisting of Al, Ga, In and N, have several physical properties that make them attractive for semiconductor devices in electronic and optic applications. A wide range of direct energy bandgaps (0.7 eV - 6.1 eV) can be obtained. READ MORE

  3. 3. Study of GaN Based Nanostructures and Hybrids

    Author : Mathias Forsberg; Galia Pozina; Ching-Lien Hsiao; Kevin P. O'Donnell; Linköpings universitet; []
    Keywords : ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; Sputtering; Forster; Semiconductor; Nitride; GaN; Hybrid; Nanorods; Nanostructure; Thin film; Förstoffning; Sputtring; Förster; Halvledare; Nitrid; GaN; Hybrider; Nanostavar; Nanostrukturer; tunnfilmer;

    Abstract : GaN and its alloys with Al and In belong to the group III nitride semiconductors and are today the materials of choice for efficient white light emitting diodes (LEDs) enabling energy saving solid state lighting. Currently, there is a great interest in the development of novel inexpensive techniques to fabricate hybrid LEDs combining high quality III-N quantum well (QW) structures with inexpensive colloidal nanoparticles or conjugated polymers. READ MORE

  4. 4. Growth and characterization of SiC and GaN

    Author : Rafal Ciechonski; Erik Janzén; Sebastian Lourdudoss; Linköpings universitet; []
    Keywords : ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiC; GaN; Deep level transient spectroscopy; Minority Carrier Transient Spectroscopy; Hall effect; Cathodoluminescence; Scanning electron microscopy; Atomic Force microscopy; sublimation growth; MOCVD; heterostructures; High Electron Mobility transistor; point defects; Material physics with surface physics; Materialfysik med ytfysik;

    Abstract : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. READ MORE

  5. 5. CVD solutions for new directions in SiC and GaN epitaxy

    Author : Xun Li; Urban Forsberg; Erik Janzén; Henrik Pedersen; Sebastian Lourdudoss; Linköpings universitet; []

    Abstract : This thesis aims to develop a chemical vapor deposition (CVD) process for the new directions in both silicon carbon (SiC) and gallium nitride (GaN) epitaxial growth. The properties of the grown epitaxial layers are investigated in detail in order to have a deep understanding. READ MORE