Search for dissertations about: "GaN properties"

Showing result 11 - 15 of 77 swedish dissertations containing the words GaN properties.

  2. 11. Characterization and Compensation of Thermal Effects in GaN HEMT Technologies

    Author : Johan Bremer; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; thermal coupling; thermal effects; thermal resistance; AlGaN GaN; temperature compensation.; electrothermal; characterization;

    Abstract : Further advancements with GaN based technologies relies on the ability to handle the heat flux, which consequently arises from the high power density. Advanced cooling techniques and thermal optimization of the technology are therefore prioritized research areas. READ MORE

  4. 12. Magnetron Sputter Epitaxy of GaN

    Author : Muhammad Junaid; Jens Birch; Lars Hultman; Vanya Darakchieva; Linköpings universitet; []
    Keywords : NATURAL SCIENCES; NATURVETENSKAP;

    Abstract : Electronic-grade GaN (0001) epilayers have been grown directly on Al2O3 (0001) substrates by reactive DC-magnetron sputter epitaxy (MSE) from a liquid Ga sputtering target in an Ar/N2 atmosphere. The as-grown GaN epitaxial film exhibit low threading dislocation density on the order of ≤ 1010 cm-2 obtained by transmission electron microscopy and modified Williamson-Hall plot. READ MORE

  5. 13. Doping effects on the structural and optical properties of GaN

    Author : Sergey Khromov; Galia Pozina; Lars Hultman; Thierry Bretagnon; Linköpings universitet; []
    Keywords : ;

    Abstract : Today there is a strong drive towards higher efficiency light emitters and devices for power electronics based on GaN and its ternary compounds. Device performance can be improved in several ways on the material level. READ MORE

  6. 14. Hot-wall MOCVD of N-polar group-III nitride materials and high electron mobility transistor structures

    Author : Hengfang Zhang; Vanya Darakchieva; Jr-Tai Chen; Ingemar Persson; Fatemeh (Shadi) Shahedipour-Sandvik; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Nitrogen-polar; MOCVD; III-nitride; GaN; AlN; C-face SiC; HEMTs;

    Abstract : Group III-Nitride semiconductors: indium nitride (InN), gallium nitride (GaN), aluminum nitride (AlN) and their alloys continue to attract significant scientific interest due to their unique properties and diverse applications in photonic and electronic applications. Group-III nitrides have direct bandgaps which cover the entire spectral range from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN). READ MORE

  7. 15. Optical characterization of wide band gap materials by spectroscopic ellipsometry

    Author : O. P. Alexander Lindquist; Linköpings universitet; []
    Keywords : Wide Band Gap materials; ellipsometry; SiC; GaN;

    Abstract : Spectroscopic ellipsometry has been employed in the study of wide band gap materials. Ellipsometry is based on the study of changes in the polarization state of light upon reflection on a surface. READ MORE