Search for dissertations about: "GaN properties"

Showing result 6 - 10 of 77 swedish dissertations containing the words GaN properties.

  2. 6. Ohmic Contacts and Thin Film Resistors for GaN MMIC Technologies

    Author : Anna Malmros; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ohmic contact; TFR; TiN; HEMT; GaN; TaN;

    Abstract : Gallium nitride (GaN) based high electron mobility transistor (HEMT) technology has attracted much attention during the last decade which has resulted in a rapid development in material quality and device performance. GaN HEMT microwave electronics are currently finding its applications in wireless communication infrastructure and radar systems. READ MORE

  4. 7. Nonlinear Characterization of Wideband Microwave Devices and Dispersive Effects in GaN HEMTs

    Author : Sebastian Gustafsson; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; large-signal; dispersive effects; electron trapping; thermal coupling; HEMT; GaN; microwave; wideband;

    Abstract : Measurements play a key role in the development of microwave hardware as they allow engineers to test and verify the RF performance on a system, circuit, and component level. Since modern cellular standards employ complex modulation formats with wider signal bandwidths to cope with the growing demand of higher datarates, nonlinear characterization using wideband stimuli is becoming increasingly important. READ MORE

  5. 8. Buffer Related Dispersive Effects in Microwave GaN HEMTs

    Author : Johan Bergsten; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; trapping effects; C-doping; AlGaN GaN interface quality; recessed ohmic contacts; GaN HEMT; buffer design;

    Abstract : In applications such as mobile communication and radar, microwave power generation at high frequency is of utmost importance. The GaN HEMT offers a unique set of properties that makes it suitable for high power amplification at high frequencies. READ MORE

  6. 9. Surface analysis of low dimensional materials : revealing their electronic properties by advanced spectroscopy

    Author : Vladimir Miranda la Hera; Thomas Wågberg; Eduardo Gracia-Espino; Tomas Edvinsson; Umeå universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Low-dimensional materials; surface science; surface-sensitive techniques; angle-resolved photoemission spectroscopy; ultraviolet photoemission spectroscopy; electronic properties;

    Abstract : Low-dimensional materials (0D, 1D, 2D) have been widely used to develop modern miniaturized (micro- and nano-) technology. The use of these materials come from their extraordinary optical, electrical, thermal, and mechanical properties, which are very different from the bulk crystal. READ MORE

  7. 10. Electronic properties of intrinsic defects and impurities in GaN

    Author : Tran Thien Duc; Carl Hemmingsson; Galia Pozina; Erik Janzén; Walter Meyer; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : With its outstanding properties such as a wide direct bandgap (3.4 eV), high electron mobility and high breakdown voltage, GaN and its alloys with In and Al are considered as one of the most important semiconductors for optoelectronic devices and high-power and high-frequency transistors. READ MORE