Search for dissertations about: "GaN substrates"

Showing result 1 - 5 of 41 swedish dissertations containing the words GaN substrates.

  2. 1. GaN/AlN Multiple Quantum Well Structures

    Author : Xinju Liu; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; GaN; AlN; multiple quantum well; Molecular beam epitaxy; Si 111 ; intersubband transition; sapphire; GaN template;

    Abstract : The III-nitride semiconductors: InN, GaN and AlN are promising for photonic, high power and high temperature electronic devices. Their large and direct band gaps cover the range 0.7 to 6.2 eV, i. READ MORE

  4. 2. Study of GaN Based Nanostructures and Hybrids

    Author : Mathias Forsberg; Galia Pozina; Ching-Lien Hsiao; Kevin P. O'Donnell; Linköpings universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Sputtering; Forster; Semiconductor; Nitride; GaN; Hybrid; Nanorods; Nanostructure; Thin film; Förstoffning; Sputtring; Förster; Halvledare; Nitrid; GaN; Hybrider; Nanostavar; Nanostrukturer; tunnfilmer;

    Abstract : GaN and its alloys with Al and In belong to the group III nitride semiconductors and are today the materials of choice for efficient white light emitting diodes (LEDs) enabling energy saving solid state lighting. Currently, there is a great interest in the development of novel inexpensive techniques to fabricate hybrid LEDs combining high quality III-N quantum well (QW) structures with inexpensive colloidal nanoparticles or conjugated polymers. READ MORE

  5. 3. Growth and characterization of SiC and GaN

    Author : Rafal Ciechonski; Erik Janzén; Sebastian Lourdudoss; Linköpings universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiC; GaN; Deep level transient spectroscopy; Minority Carrier Transient Spectroscopy; Hall effect; Cathodoluminescence; Scanning electron microscopy; Atomic Force microscopy; sublimation growth; MOCVD; heterostructures; High Electron Mobility transistor; point defects; Material physics with surface physics; Materialfysik med ytfysik;

    Abstract : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. READ MORE

  6. 4. Molecular Beam Epitaxy and Characterisation of GaN-compounds on GaAs(001) and Sapphire(0001)

    Author : Otto Zsebök; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; AlGaN GaN HFET; plasma-assisted MBE; GaNAs; nitridation damage; InGaN; group-III nitrides; GaN; AlGaN; phase-separation;

    Abstract : The hexagonal (wurtzite) and the cubic (zinc blende) group-III nitrides and their heterostructures have attracted much attention due to their potential for applications in high-power, high-frequency electronic and optoelectronic devices. The optical emission range of the GaN-based alloys cover the whole visible range from near infrared (IR) to ultraviolet (UV). READ MORE

  7. 5. CVD solutions for new directions in SiC and GaN epitaxy

    Author : Xun Li; Urban Forsberg; Erik Janzén; Henrik Pedersen; Sebastian Lourdudoss; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; CVD; SiC; GaN; epitaxy;

    Abstract : This thesis aims to develop a chemical vapor deposition (CVD) process for the new directions in both silicon carbon (SiC) and gallium nitride (GaN) epitaxial growth. The properties of the grown epitaxial layers are investigated in detail in order to have a deep understanding. READ MORE