Search for dissertations about: "GaNAs"
Showing result 1 - 5 of 10 swedish dissertations containing the word GaNAs.
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1. GaN, AlGaN, GaNAs and Related Heterostructures Grown by Molecular Beam Epitaxy
Abstract : This work deals with growth and characterization of III-nitrides and related heterostructures as well as GaNAs alloys grown by plasma assisted molecular beam epitaxy (MBE). The III-nitrides belong to the wide bandgap semiconductors due to their large energy bandgap spanning from 1.9 to 6.2 eV. READ MORE
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2. Molecular Beam Epitaxy and Characterisation of GaN-compounds on GaAs(001) and Sapphire(0001)
Abstract : The hexagonal (wurtzite) and the cubic (zinc blende) group-III nitrides and their heterostructures have attracted much attention due to their potential for applications in high-power, high-frequency electronic and optoelectronic devices. The optical emission range of the GaN-based alloys cover the whole visible range from near infrared (IR) to ultraviolet (UV). READ MORE
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3. Spin-dependent recombination in Ga(In)NAs alloys
Abstract : The abilities to control and manipulate electron spin, especially in semiconductors, lead to many interesting proposals for spin-functional devices in future spintronics and quantum information technology. A key requirement for the success of these proposals is that the spin functionality should be operational at room temperature (RT), which remains as a great challenge. READ MORE
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4. Room-temperature defect-engineered spin functionalities in Ga(In)NAs alloys
Abstract : Semiconductor spintronics is one of the most interesting research fields that exploits both charge and spin properties for future photonics and electronic devices. Among many challenges of using spin in semiconductors, efficient generation of electron spin polarization at room temperature (RT) remains difficult. READ MORE
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5. Micro-photoluminescence and micro-Raman spectroscopy of novel semiconductor nanostructures
Abstract : Low-dimensional semiconductor structures, such as one-dimensional nanowires (NWs) and zerodimensional quantum dots (QDs), are materials with novel fundamental physical properties and a great potential for a wide range of nanoscale device applications. Here, especially promising are direct bandgap II-VI and III-V compounds and related alloys with a broad selection of compositions and band structures. READ MORE