Search for dissertations about: "GaSb"

Showing result 1 - 5 of 18 swedish dissertations containing the word GaSb.

  1. 1. Antimonide Heterostructure Nanowires - Growth, Physics and Devices

    Author : Mattias Borg; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; GaSb; InSb; epitaxy; Nanowires; antimonides; tunnel field effect transistors; tunnel diode; InAsSb; Fysicumarkivet A:2012:Borg;

    Abstract : Abstract in UndeterminedThis thesis investigates the growth and application of antimonide heterostructure nanowires for low-power electronics. In the first part of the thesis, GaSb, InSb and InAsSb nanowire growth is presented, and the distinguishing features of the growth are described. READ MORE

  2. 2. Electrical Characterization of III-V Nanostructure

    Author : Aein Shiri Babadi; Institutionen för elektro- och informationsteknik; []
    Keywords : High-κ; Metal-Oxide-Semicondcutor capacitors; MOSCAPs; III-V semiconductors; InAs; GaSb; interface traps; border traps; C-V; Simulations; Nanowire; MOSFET; Fabrication;

    Abstract : This thesis investigates the electronic properties of a number of novel III-V materials and material combinations for transistor applications. In particular, high-κ/InAs metal-oxide-semiconductor (MOS) structures and transport properties of GaSb nanowires have been studied. READ MORE

  3. 3. Vertical III-V Nanowire Tunnel Field-Effect Transistor

    Author : Elvedin Memisevic; Nanoelektronik; []
    Keywords : Transistor; TFET; Steep slope; Nanowire; III-V materials; HSQ; Vertical; InAs; GaSb; MOSFET;

    Abstract : In this thesis fabrication and optimization of vertical III-V Tunneling Field-Effect transistors was explored. Usage of vertical nanowires, allows for combination of materials with large lattice mismatch in the same nanowire structure. READ MORE

  4. 4. Vertical Heterostructure III-V MOSFETs for CMOS, RF and Memory Applications

    Author : Adam Jönsson; Nanoelektronik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; CMOS; RRAM; III-V; InAs; GaSb; InGaAs; Heterostructure; vertical; nanowire NW ; MOSFET; III-V materials; RRAM; RF; CMOS; InAs; GaSb; InGaAs; heterostructure; Vertical nanowire;

    Abstract : This thesis focuses mainly on the co-integration of vertical nanowiren-type InAs and p-type GaSb MOSFETs on Si (Paper I & II), whereMOVPE grown vertical InAs-GaSb heterostructure nanowires areused for realizing monolithically integrated and co-processed all-III-V CMOS.Utilizing a bottom-up approach based on MOVPE grown nanowires enablesdesign flexibilities, such as in-situ doping and heterostructure formation,which serves to reduce the amount of mask steps during fabrication. READ MORE

  5. 5. Electronic materials : growth and characterisation

    Author : Michael A. Grishin; Ulf O. Karlsson; Massimo Sancrotti; KTH; []
    Keywords : ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electrophysics; Photoemission; Ultra-short laser pulse; Thin film; Laser deposition; InSb; InAs; GaSb; Ferroelectrics; Elektrofysik; Electrophysics; Elektrofysik;

    Abstract : In this thesis the InSb(111), InAs(111) and GaSb(001) surfaces have been studied by means of time- and angle-resolved photoemission spectroscopy based upon the femtosecond laser system. The pump-and-probe technique allows to analyse both electron states in the valence band and normally unpopulated electron states above the valence band, which can be occupied by transiently excited carriers at the optically pumped surface. READ MORE