Search for dissertations about: "Gallium nitride"
Showing result 11 - 15 of 50 swedish dissertations containing the words Gallium nitride.
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11. GaN HEMT Low Noise Amplifiers for Radio Base Station Receivers
Abstract : Gallium nitride (GaN) high electron mobility transistor (HEMT) has been introduced as the technology of choice for high power microwave applications due to its material properties including high saturation electron velocity and breakdown field together with excellent thermal conductivity and robustness.It is also a promising candidate for receiver front-ends in the radio base station(RBS) where low noise figure and high linearity are key issues for low noiseamplifier (LNA) design. READ MORE
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12. GaN-based HEMTs for Cryogenic Low-Noise Applications
Abstract : Radio-astronomy deals with signals and radiations of extremely weak intensity. Also, it requires robust and rugged technologies able to sustain and prevent the Radio Frequency Interferences (RFI). READ MORE
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13. Frequency Reconfigurable and Linear Power Amplifiers Based on Doherty and Varactor Load Modulation Techniques
Abstract : In future mobile communication networks, there will be a shift towards higher carrier frequencies and highly integrated multiple antenna systems. The system performance will largely depend on the available RF hardware. As such, RF power amplifiers (PAs) with improved efficiency, linearity, and bandwidth are needed. READ MORE
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14. Advanced III-Nitride Technology for mm-Wave Applications
Abstract : Within wireless communication, there is a continuously growing need for more bandwidth due to an increasing number of users and data intense services. The development within sensor systems such as radars, is largely driven by the need for increased detection range and robustness. READ MORE
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15. A Study of Group 13-Nitride Atomic Layer Deposition : Computational Chemistry Modelling of Atomistic Deposition Processes
Abstract : The crystalline solids aluminium nitride (AlN), gallium nitride (GaN) and indium nitride (InN), together with their alloys, are of huge interest in the semiconductor industry. Their bandgaps span an extensive range from 6.0 eV for AlN to 0.7 eV for InN, with GaN in between at a bandgap of 3. READ MORE