Search for dissertations about: "Gallium nitride"

Showing result 21 - 25 of 50 swedish dissertations containing the words Gallium nitride.

  2. 21. NbTiN for improved superconducting detectors

    Author : Julien Zichi; Val Zwiller; Gregory Gol'tsman; KTH; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; superconducting nanowire sngle photon detector; SNSPD; niobium titanium nitride; NbTiN; reactive co-sputtering; quantum communications; quantum sensing; Fysik; Physics;

    Abstract : The physics of single photons is fascinating, by manipulating them we can observe and probe quantum effects. Doing so requires the fabrication and utilization of single photon sources, of which many types have been developed including quantum dots, trapped atoms and ions, and color centers. READ MORE

  4. 22. Self-Assembled and Selective-Area Growth of Group III-Nitride Semiconductor Nanorods by Magnetron Sputter Epitaxy

    Author : Elena Alexandra Serban; Ching-Lien Hsiao; Jens Birch; Per Persson; Lars Hultman; Eva Monroy; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : The III-nitride semiconductor family includes gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), and the related ternary and quaternary alloys. The research interest on this group of materials is sparked by the direct bandgaps, and excellent physical and chemical properties. READ MORE

  5. 23. Group 11–14 Triazenides : Synthesis, characterization, and thermal evaluation for use in chemical vapor deposition

    Author : Rouzbeh Samii; Henrik Pedersen; Nathan O´brien; Andrew Johnson; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : Chemical vapor deposition (CVD) and atomic layer deposition (ALD) are corner-stone techniques for depositing thin films in semi-conductor manufacturing. To deposit semiconductor grade materials, these techniques rely on high-performance precursors. READ MORE

  6. 24. Characterization and Analysis of Surface Passivations and Gate Insulators for AlGaN/GaN Microwave HFETs

    Author : Martin Fagerlind; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; HFET; passivation characterization; passivation; AlGaN GaN heterostructure;

    Abstract : The large bandgap of gallium nitride (GaN) and aluminum gallium nitride (AlGaN) offers an inherently high intrinsic breakdown field. When the materials are joined into the AlGaN/GaN heterostructure a 2-dimensional electron gas (2DEG) with a high electron density as well as high electron mobility is generated. READ MORE

  7. 25. Magnetron Sputter Epitaxy of Group III-Nitride Semiconductor Nanorods

    Author : Alexandra Serban; Jens Birch; Ching-Lien Hsiao; Per Ola Åke Persson; Lars Hultman; Kimberly Thelander; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : The III-nitride semiconductors family includes gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), and related ternary and quaternary alloys. The research interest on this group of materials is sparked by the direct bandgaps, and excellent physical and chemical properties. READ MORE