Search for dissertations about: "Gate drive circuits"
Showing result 1 - 5 of 12 swedish dissertations containing the words Gate drive circuits.
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1. On Reliability of SiC Power Devices in Power Electronics
Abstract : Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1. READ MORE
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2. On Gate Drivers and Applications of Normally-ON SiC JFETs
Abstract : In this thesis, various issues regarding normally-ON silicon carbide (SiC)Junction Field-Effect Transistors (JFETs) are treated. Silicon carbide powersemiconductor devices are able to operate at higher switching frequencies,higher efficiencies, and higher temperatures compared to silicon counterparts. READ MORE
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3. On SiC JFET converters: components, gate-drives and main-circuit conditions
Abstract : This thesis deals with Silicon Carbide Junction Field Effect Transistors (SiC JFETs) - how to use them to their full potential in power electronic circuits, how to model them in a power electronic simulation program, and how a gate drive can be built. To fully utilize the low on-state losses of SiC JFETs it is suggested that SiC JFETs should not be equipped with anti-parallel diodes. READ MORE
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4. Low-Power Nanowire Circuits and Transistors
Abstract : This thesis explores several novel material systems and innovative device concepts enabled by nanowire technology. State-of-the-art fabrication techniques such as electron beam lithography and atomic layer deposition are utilized to achieve high control and quality in the device fabrication. READ MORE
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5. On Gate Drivers for MOS-Controlled Power Devices and dv-dt Filters for Train Traction Converters
Abstract : In this thesis, low-loss gate-drive solutions and a proposed dv/dt-filter have been investigated with focus on train traction converters with dv/dt constraints.By using the silicon carbide (SiC) junction field-effect transistor (JFET), the switching losses can be significantly reduced compared to the commonly used insulated-gate bipolar transistor (IGBT), but complex gate-driver solutions are required for high utilization in terms of loss reduction. READ MORE