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Showing result 1 - 5 of 31 swedish dissertations matching the above criteria.
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1. Thin Mn silicide and germanide layers studied by photoemission and STM
Abstract : The research presented in this thesis concerns experimental studies of thin manganese silicide and germanide layers, grown by solid phase epitaxy on the Si(111)7×7 and the Ge(111)c(2×8) surfaces, respectively. The atomic and electronic structures, as well as growth modes of the epitaxial Mn-Si and Mn-Ge layers, were investigated by low-energy electron diffraction (LEED), angle-resolved photoelectron spectroscopy (ARPES), core-level spectroscopy (CLS), and scanning tunneling microscopy and spectroscopy (STM and STS). READ MORE
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2. Scanning Tunneling Microscopy and Photoelectron Spectroscopy Studies of Si(111) and Ge(111) Surfaces : Clean and Modified by H or Sn Atoms
Abstract : The (111) surfaces of Si and Ge were studied by scanning tunneling microscopy (STM) and photoelectron spectroscopy (PES) that are complementary techniques used to obtain structural and electronic properties of surfaces. The (111) surfaces have been of great interest because of the complex reconstructions formed by annealing. READ MORE
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3. Gamma-ray Spectroscopy ofNeutron-rich 111 Mo, 85,87 Ge andSelf-Conjugate 88 Ru Far From Stability
Abstract : The neutron-deficient self-conjugate (N=Z) nucleus 8844 Ru 44 was populatedvia the heavy ion fusion evaporation reaction 54 Fe( 36 Ar, 2n) 88 Ru in an ex-periment performed at the GANIL accelerator laboratory in France. Usingthe AGATA γ-ray spectrometer together with ancillary detectors, promptγ − γ − 2n coincidence and charge particle anticoincidence analysis was per-formed for the low-lying energy spectrum of 88 Ru. READ MORE
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4. Photoemission and Theoretical Studies of the Alkali Metal and Ag-Induced 3x1 and (square root of 3) x (square root of 3) Reconstructions on Si(111) and Ge(111)
Abstract : .... READ MORE
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5. Interaction of Ni with SiGe for electrical contacts in CMOS technology
Abstract : This thesis investigates the reactive formation of Ni mono-gernanosilicide, NiSi1-uGeu, for contact metallization of future CMOS devices where Si1-xGex can be present in the gate, source and drain of a MOSFET. Although the investigation has been pursued with a strong focus on materials aspects, issues related to process integration in MOSFETs both on conventional bulk Si and ultra-thin body SOI have been taken into consideration. READ MORE