Search for dissertations about: "HEMTs"

Showing result 1 - 5 of 56 swedish dissertations containing the word HEMTs.

  2. 1. Hot-wall MOCVD for advanced GaN HEMT structures and improved p-type doping

    Author : Alexis Papamichail; Vanya Darakchieva; Anelia Kakanakova-Gueorguieva; Jr-Tai Chen; Zlatko Sitar; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Hot-wall MOCVD; III-nitrides; p-type GaN; HEMTs; Linearity; High-Al barrier;

    Abstract : The transition to energy efficient smart grid and wireless communication with improved capacity require the development and optimization of next generation semiconductor technologies and electronic device components. Indium nitride (InN), gallium nitride (GaN) and aluminum nitride (AlN) compounds and their alloys are direct bandgap semiconductors with bandgap energies ranging from 0. READ MORE

  4. 2. Hot-wall MOCVD of N-polar group-III nitride materials and high electron mobility transistor structures

    Author : Hengfang Zhang; Vanya Darakchieva; Jr-Tai Chen; Ingemar Persson; Fatemeh (Shadi) Shahedipour-Sandvik; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Nitrogen-polar; MOCVD; III-nitride; GaN; AlN; C-face SiC; HEMTs;

    Abstract : Group III-Nitride semiconductors: indium nitride (InN), gallium nitride (GaN), aluminum nitride (AlN) and their alloys continue to attract significant scientific interest due to their unique properties and diverse applications in photonic and electronic applications. Group-III nitrides have direct bandgaps which cover the entire spectral range from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN). READ MORE

  5. 3. On the characterization and design of active microwave components

    Author : Martin Schöön; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; microwave devices; radar systems; GaAs; design; MESFETs; HEMTs;

    Abstract : .... READ MORE

  6. 4. High Frequency (MHz) Resonant Converters using GaN HEMTs and Novel Planar Transformer Technology

    Author : Hari Babu Kotte; kent Bertilsson; Bengt Oelmann; Noel Shammas; Torbjörn Thiringer; Per Karlsson; Mittuniversitetet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN HEMTs; MHz Frequency; Resonant Converters; Planar Transformer Technology;

    Abstract : The increased power consumption and power density demands of moderntechnologies have increased the technical requirements of DC/DC and AC/DC powersupplies. In this regard, the primary objective of the power supply researcher/engineeris to build energy efficient, high power density converters by reducing the losses andincreasing the switching frequency of converters respectively. READ MORE

  7. 5. GaN-based HEMTs for Cryogenic Low-Noise Applications

    Author : Mohamed Aniss Mebarki; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Cryogenic temperatures; superconductivity; RFI; High Electron Mobility Transistor HEMT ; Low Noise Amplifier LNA ; Niobium Nb ; Radio-astronomy; Gallium Nitride GaN ; high frequency;

    Abstract : Radio-astronomy deals with signals and radiations of extremely weak intensity. Also, it requires robust and rugged technologies able to sustain and prevent the Radio Frequency Interferences (RFI). READ MORE