Search for dissertations about: "Hall measurements"

Showing result 11 - 15 of 40 swedish dissertations containing the words Hall measurements.

  1. 11. Structural and Electrical Transport Properties of Doped Nd-123 Superconductors

    University dissertation from Stockholm : Fysik

    Author : Shaban Reza Ghorbani; [2003]
    Keywords : high temperature superconductors; critical temperature; resistivity; thermoelectric power; Hall coefficient; X-ray diffraction; Neutron diffraction; NdBa2Cu3O7-delta; hole concentration; substitution;

    Abstract : It is generally believed that one of the key parameterscontrolling the normal state and superconducting properties ofhigh temperature superconductors is the charge carrierconcentrationpin the CuO2planes.By changing the non-isovalent dopingconcentration on the RE site as well as the oxygen content in(RE)Ba2Cu3O7−δ, an excellent tool is obtained tovary the hole concentration over a wide range from theunderdoped up to the overdoped regime. READ MORE

  2. 12. Growth and characterization of SiC and GaN

    University dissertation from Linköping : Linköping University Electronic Press

    Author : Rafal Ciechonski; Erik Janzén; Sebastian Lourdudoss; [2007]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiC; GaN; Deep level transient spectroscopy; Minority Carrier Transient Spectroscopy; Hall effect; Cathodoluminescence; Scanning electron microscopy; Atomic Force microscopy; sublimation growth; MOCVD; heterostructures; High Electron Mobility transistor; point defects; TECHNOLOGY Engineering physics Material physics with surface physics; TEKNIKVETENSKAP Teknisk fysik Materialfysik med ytfysik;

    Abstract : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. READ MORE

  3. 13. Electrical Characterization of Integrated InAs Nano-Structures

    University dissertation from Lund University (Media-Tryck)

    Author : Gvidas Astromskas; [2010]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; DLTS; Fermi level pinning; epitaxial growth; threshold voltage; nanowire capacitance; overgrowth; Hall mobility; GaSb; InAs;

    Abstract : This thesis analyzes the electrical properties of InAs nano-structures, that are integrated into different materials and geometries. The thesis describes integration related issues of InAs, the epitaxial synthesis of the InAs nano-structures and summarizes experimental techniques for analysis of electrical properties of the integrated structures. READ MORE

  4. 14. Study of novel electronic materials by mid-infrared and terahertz optical Hall effect

    University dissertation from Linköping : Linköping University Electronic Press

    Author : Nerijus Armakavicius; Vanya Darakchieva; Philipp Kühne; Mircea Modreanu; [2017]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Abstract : Development of silicon based electronics have revolutionized our every day life during the last three decades. Nowadays Si based devices operate close to their theoretical limits that is becoming a bottleneck for further progress. READ MORE

  5. 15. Epitaxial Graphene Technology for Quantum Metrology

    University dissertation from Linköping : Linköping University Electronic Press

    Author : Thomas Yager; [2015]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; charge neutrality; optical microscopy; Epitaxial graphene; resistance metrology; silicon carbide; quantum Hall effect; electron transport; bilayer graphene;

    Abstract : Graphene grown on silicon carbide by high-temperature annealing (SiC/G) is a strong contender in the race towards large-scale graphene electronics applications. The unique electronic properties of this system lead to a remarkably robust and accurate Hall resistance quantisation of 0. READ MORE