Search for dissertations about: "Hall mobility"

Showing result 1 - 5 of 24 swedish dissertations containing the words Hall mobility.

  2. 1. InGaAs Nanowire and Quantum Well Devices

    Author : Lasse Södergren; NanoLund: Centre for Nanoscience; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; nanowire; quantum well; cryogenic; III-V; InGaAs; MOSFET; MOVPE; Hall; mobility; ballistic; RF;

    Abstract : To fulfill the increasing demand for high-speed electronics used for computation or communication is one everlasting challenge for the semiconductor industry. Emerging fields such as quantum computation also has a need for circuits operating at cryogenic temperatures. READ MORE

  4. 2. On benthic fluxes of phosphorus in the Baltic Sea proper – drivers and estimates

    Author : Nils Ekeroth; Sven Blomqvist; Per Hall; Volker Brüchert; Brita Sundelin; Jonas Gunnarsson; Stockholms universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Marine Ecology; marin ekologi;

    Abstract : This Thesis focuses on the exchange of phosphorus (P) across the sediment–water interface in the Baltic Sea proper, with particular attention to the influence of bioturbating macrofauna and benthic redox conditions. Benthic P fluxes have major influence on P availability in the water column, which in turn regulates growth conditions for dinitrogen fixating cyanobacteria in the Baltic proper. READ MORE

  5. 3. III-V Devices for Emerging Electronic Applications

    Author : Patrik Olausson; NanoLund: Centre for Nanoscience; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Cryogenic; Hall; III-V; InAs; InGaAs; Josephson junction; Magnetoresistance; MOSFET; Nanowire; Quantum well; Superconductivity; Template-assisted selective epitaxy; Cryogenic; Hall; III-V; InAs; InGaAs; Josephson junction; Magnetoresistance; MOSFET; Nanowire; Quantum well; Superconductivity; Template-assisted selective epitaxy;

    Abstract : Today’s digitalized society relies on the advancement of silicon (Si) Complementary Metal Oxide Semiconductor (CMOS) technology, but the limitations of down-scaling and the rapidly increasing demand for added functionality that is not easily achieved in Si, have pushed efforts to monolithically 3D-integrate III-V devices above the Si-CMOS technology. In addition, the demand for increased computational power and handling of vast amounts of data is rapidly increasing. READ MORE

  6. 4. Experimental Studies of Charge Transport in Single Crystal Diamond Devices

    Author : Saman Majdi; Jan Isberg; Ricardo S. Sussmann; Uppsala universitet; []
    Keywords : Single crystal diamond; carrier transport; CVD diamond; time-of-flight; mobility; IR detector; compensation; diamond diode; drift velocity; thermal detector;

    Abstract : Diamond is a promising material for high-power, high-frequency and high- temperature electronics applications, where its outstanding physical properties can be fully exploited. It exhibits an extremely high bandgap, very high carrier mobilities, high breakdown field strength, and the highest thermal conductivity of any wide bandgap material. READ MORE

  7. 5. Electrical Characterization of Integrated InAs Nano-Structures

    Author : Gvidas Astromskas; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; DLTS; Fermi level pinning; epitaxial growth; threshold voltage; nanowire capacitance; overgrowth; Hall mobility; GaSb; InAs;

    Abstract : This thesis analyzes the electrical properties of InAs nano-structures, that are integrated into different materials and geometries. The thesis describes integration related issues of InAs, the epitaxial synthesis of the InAs nano-structures and summarizes experimental techniques for analysis of electrical properties of the integrated structures. READ MORE