Search for dissertations about: "Henry Radamson"

Found 4 swedish dissertations containing the words Henry Radamson.

2. 1. Integration of epitaxial SiGe(C) layers in advanced CMOS devices

   Author : Julius Hållstedt; Henry Radamson; Eugene A. Fitzgerald; KTH; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; Silicon Germanium Carbon SiGeC ; Chemical Vapor Deposition CVD ; Epitaxy; Pattern Dependency; MOSFET; Mobility; Spacer Gate Technology; Semiconductor physics; Halvledarfysik;

   Abstract : Heteroepitaxial SiGe(C) layers have attracted immense attention as a material for performance boost in state of the art electronic devices during recent years. Alloying silicon with germanium and carbon add exclusive opportunities for strain and bandgap engineering. READ MORE

4. 2. Application of SiGe(C) in high performance MOSFETs and infrared detectors

   Author : Mohammadreza Kolahdouz Esfahani; Henry Radamson; Ya-Hong Xie; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Germanium Carbon SiGeC ; Reduced Pressure Chemical Vapor Deposition RPCVD ; Epitaxy; Pattern Dependency; MOSFET; Mobility; bolometer; Quantum Well; Infrared IR Detection; Ni Silicide; High Resolution X-ray Diffraction HRXRD ; High Resolution Scanning Electron Microscopy HRSEM ; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik;

   Abstract : Epitaxially grown SiGe(C) materials have a great importance for many device applications. In these applications, (strained or relaxed) SiGe(C) layers are grown either selectively on the active areas, or on the entire wafer. READ MORE

5. 3. Design, Modelling and Characterization of Si/SiGe Structures for IR Bolometer Applications

   Author : Mahdi Moeen; Mikael Östling; Henry Radamson; Omer Nour; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

   Abstract : This thesis presents SiGe(C)/Si(C) multi quantum well (MQW) layers individually or in combination with Si(C) Schottky diodes as material structures to detect infrared (IR) radiation. The performance of devices was investigated in terms of SiGe/Si periodicity and quality of SiGe/Si interface. READ MORE

6. 4. Growth, processing and characterization of group IV materials for thermoelectric applications

   Author : Mohammad Noroozi; Muhammet .S Toprak; Henry .H Radamson; Raşit Turan; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; Thermoelectric; SiGe; GeSn Si ; Chemical vapor deposition; Nanowires; Fysik; Physics;

   Abstract : Discover of new energy sources and solutions are one of the important global issues nowadays, which has a big impact on economy as well as environment. One of the methods to help to mitigate this issue is to recover wasted heat, which is produced in large quantities by the industry, through vehicle exhausts and in many other situations where we consume energy. READ MORE