Search for dissertations about: "HfO2"

Showing result 1 - 5 of 16 swedish dissertations containing the word HfO2.

  1. 1. CVD and ALD of Group IV- and V-Oxides for Dielectric Applications

    University dissertation from Uppsala : Acta Universitatis Upsaliensis

    Author : Katarina Forsgren; Uppsala universitet.; [2001]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Chemistry; CVD; ALD; Dielectric constant; Tantalum oxide; Ta2O5; Zirconium oxide; ZrO2; Hafnium oxide; HfO2; QCM; Kemi; NATURAL SCIENCES Chemistry; NATURVETENSKAP Kemi; Inorganic Chemistry; oorganisk kemi;

    Abstract : Due to the constantly decreasing dimensions of electronic devices, the conventional dielectric material in transistors and capacitors, SiO2, has to be replaced by a material with higher dielectric constant. Some of the most promising candidates are tantalum oxide,Ta2O5, zirconium oxide, ZrO2 and hafnium oxide, HfO2. READ MORE

  2. 2. Charge carrier traffic at interfaces in nanoeletronic structures

    University dissertation from Uppsala : Acta Universitatis Upsaliensis

    Author : Bahman Raeissi; [2010]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; HfO2; oxide traps; High-k; interface states;

    Abstract : This thesis describes investigations in relation to the search for materials with high dielectric constant, k, for future CMOS transistors. The most elementary quantities to be considered are k-value and energy band offsets between the dielectric and the silicon crystal on which it is deposited. READ MORE

  3. 3. Silicon nanowire based devices for More than Moore Applications

    University dissertation from Stockholm, Sweden : KTH Royal Institute of Technology

    Author : Ganesh Jayakumar; KTH.; [2018]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. READ MORE

  4. 4. Atomic Layer Deposition and Immobilised Molecular Catalysts Studied by In and Ex Situ Electron Spectroscopy

    University dissertation from Lund University, Faculty of Science, Department of Physics

    Author : Payam Shayesteh; Lund University.; Lunds universitet.; Lund University.; Lunds universitet.; Lund University.; Lunds universitet.; [2019-02]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; Ambient pressure XPS; Catalysis; Heterogenisation; Atomic layer deposition; HfO2; Gas phase; TDMAHf; TDMAT; Fysicumarkivet A:2019:Shayesteh;

    Abstract : The research work that I describe in my thesis deals with three different heterogenisation approaches for synthesising a heterogeneous transition metal catalyst used for direct C-H activation reactions. The three heterogenisation approaches considered in my research are: (1) heterogenisation of a molecular catalyst on a polymer support using covalent bonds, (2) heterogenisation of a catalyst on a reduced graphene oxide (rGO) support using non-covalent interactions and (3) immobilisation of a catalyst on an inorganic surface using covalent bonds and encapsulation in an inorganic matrix. READ MORE

  5. 5. Employing Metal Iodides and Oxygen in ALD and CVD of Functional Metal Oxides

    University dissertation from Uppsala : Acta Universitatis Upsaliensis

    Author : Jonas Sundqvist; Uppsala universitet.; [2003]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Inorganic chemistry; CVD; ALD; tantalum oxide; hafnium oxide; tin oxide; epitaxy; Ta2O5; HfO2; SnO2; XRD; Oorganisk kemi; NATURAL SCIENCES Chemistry Inorganic chemistry; NATURVETENSKAP Kemi Oorganisk kemi; Inorganic Chemistry; Oorganisk kemi;

    Abstract : Many materials exhibit interesting and novel properties when prepared as thin films. Thin film metal oxides have had an impact on the technological progress of the microelectronics mainly due to their electrical and optical properties. READ MORE