Search for dissertations about: "HfO2"

Showing result 1 - 5 of 13 swedish dissertations containing the word HfO2.

  1. 1. Charge carrier traffic at interfaces in nanoeletronic structures

    Author : Bahman Raeissi; [2010]

    Abstract : This thesis describes investigations in relation to the search for materials with high dielectric constant, k, for future CMOS transistors. The most elementary quantities to be considered are k-value and energy band offsets between the dielectric and the silicon crystal on which it is deposited. READ MORE

  2. 2. Atomic Layer Deposition and Immobilised Molecular Catalysts Studied by In and Ex Situ Electron Spectroscopy

    University dissertation from Lund University, Faculty of Science, Department of Physics

    Author : Payam Shayesteh; [2019-02]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; Ambient pressure XPS; Catalysis; Heterogenisation; Atomic layer deposition; HfO2; Gas phase; TDMAHf; TDMAT; Fysicumarkivet A:2019:Shayesteh;

    Abstract : The research work that I describe in my thesis deals with three different heterogenisation approaches for synthesising a heterogeneous transition metal catalyst used for direct C-H activation reactions. The three heterogenisation approaches considered in my research are: (1) heterogenisation of a molecular catalyst on a polymer support using covalent bonds, (2) heterogenisation of a catalyst on a reduced graphene oxide (rGO) support using non-covalent interactions and (3) immobilisation of a catalyst on an inorganic surface using covalent bonds and encapsulation in an inorganic matrix. READ MORE

  3. 3. CVD and ALD of Group IV- and V-Oxides for Dielectric Applications

    University dissertation from Uppsala : Acta Universitatis Upsaliensis

    Author : Katarina Forsgren; Steven George; [2001]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Chemistry; CVD; ALD; Dielectric constant; Tantalum oxide; Ta2O5; Zirconium oxide; ZrO2; Hafnium oxide; HfO2; QCM; Kemi; NATURAL SCIENCES Chemistry; NATURVETENSKAP Kemi; Inorganic Chemistry; oorganisk kemi;

    Abstract : Due to the constantly decreasing dimensions of electronic devices, the conventional dielectric material in transistors and capacitors, SiO2, has to be replaced by a material with higher dielectric constant. Some of the most promising candidates are tantalum oxide,Ta2O5, zirconium oxide, ZrO2 and hafnium oxide, HfO2. READ MORE

  4. 4. Silicon device substrate and channel characteristics influenced by interface properties

    University dissertation from Uppsala : Acta Universitatis Upsaliensis

    Author : Mikael Johansson; [2005]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; channel; attenuation; zro2; interface; traps; semi-insulating; high-k; mos; cross-talk; hfo2;

    Abstract : This thesis is divided in two parts, one dealing with the depleted Si/Si structure, which is a substrate behaving as a semi-insulating material intended for radio-frequency applications and the other concerning high-k gate dielectrics (dielectrics with high dielectric constant) as the replacement for silicon dioxide as MOS gate dielectric.High frequency applications of CMOS integrated circuits, to lower cost, achieve higher performance and richer functionality, depends partly on the possibility to decrease the substrate coupling between different parts of the circuit. READ MORE

  5. 5. Employing Metal Iodides and Oxygen in ALD and CVD of Functional Metal Oxides

    University dissertation from Uppsala : Acta Universitatis Upsaliensis

    Author : Jonas Sundqvist; Anders Hårsta; Roy Gordon; [2003]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Inorganic chemistry; CVD; ALD; tantalum oxide; hafnium oxide; tin oxide; epitaxy; Ta2O5; HfO2; SnO2; XRD; Oorganisk kemi; NATURAL SCIENCES Chemistry Inorganic chemistry; NATURVETENSKAP Kemi Oorganisk kemi; Inorganic Chemistry; Oorganisk kemi;

    Abstract : Many materials exhibit interesting and novel properties when prepared as thin films. Thin film metal oxides have had an impact on the technological progress of the microelectronics mainly due to their electrical and optical properties. READ MORE