Search for dissertations about: "HfO2"

Showing result 16 - 20 of 25 swedish dissertations containing the word HfO2.

  1. 16. Vertical III-V Nanowires For In-Memory Computing

    Author : Saketh Ram Mamidala; Nanoelektronik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; RRAM; 1T1R; gate all-around; MOSFET; III-V nanowire; In-memory computing;

    Abstract : In recent times, deep neural networks (DNNs) have demonstrated great potential in various machine learning applications,such as image classification and object detection for autonomous driving. However, increasing the accuracy of DNNsrequires scaled, faster, and more energy-efficient hardware, which is limited by the von Neumann architecture whereseparate memory and computing units lead to a bottleneck in performance. READ MORE

  2. 17. Vertical III-V Nanowire Transistors for Low-Power Logic and Reconfigurable Applications

    Author : Zhongyunshen Zhu; Nanoelektronik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Abstract : With rapid increase in energy consumption of electronics used in our daily life, the building blocks — transistors — need to work in a way that has high energy efficiency and functional density to meet the demand of further scaling. III-V channel combined with vertical nanowire gate-all-around (GAA) device architecture is a promising alternative to conventional Si transistors due to its excellent electrical properties in the channel and electrostatic control across the gate oxide in addition to reduced footprint. READ MORE

  3. 18. Metal Gate Technology for Advanced CMOS Devices

    Author : Gustaf Sjöblom; Jörgen Olsson; Stefan de Gendt; Uppsala universitet; []
    Keywords : Electronics; metal gate; high-k dielectrics; titanium nitride; zirconium nitride; MOSFET; thin film; work function; XPS; Elektronik;

    Abstract : The development and implementation of a metal gate technology (alloy, compound, or silicide) into metal-oxide-semiconductor field effect transistors (MOSFETs) is necessary to extend the life of planar CMOS devices and enable further downscaling. This thesis examines possible metal gate materials for improving the performance of the gate stack and discusses process integration as well as improved electrical and physical measurement methodologies, tested on capacitor structures and transistors. READ MORE

  4. 19. Oxidative dissolution of doped UO2 and H2O2 reactivity towards oxide surfaces : A kinetic and mechanistic study

    Author : Kristina Nilsson; Mats Jonsson; Mats Johansson; KTH; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Oxidative dissolution; UO2; ADOPT; H2O2; Spent Nuclear Fuel.; Kemi; Chemistry;

    Abstract : Oxidative dissolution of std. UO2 and UO2 doped with Cr2O3 and Al2O3, i.e. ADOPT, induced by H2O2 and γ radiation has been the main focus in this licentiate thesis. READ MORE

  5. 20. Novel Processing and Electrical Characterization of Nanowires

    Author : Kristian Storm; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Gate; Capacitance; Hall effect; InP; InAs; Characterization; Nanowires; Processing; LED; Transistor; Fysicumarkivet A:2013:Storm;

    Abstract : This thesis investigates novel electrical nanowire characterization tools and devices. Conventional characterization methods, long available to bulk semiconductor samples, have been adapted and transferred to the nanowire geometry. READ MORE