Search for dissertations about: "HfO2"
Showing result 6 - 10 of 25 swedish dissertations containing the word HfO2.
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6. Silicon device substrate and channel characteristics influenced by interface properties
Abstract : This thesis is divided in two parts, one dealing with the depleted Si/Si structure, which is a substrate behaving as a semi-insulating material intended for radio-frequency applications and the other concerning high-k gate dielectrics (dielectrics with high dielectric constant) as the replacement for silicon dioxide as MOS gate dielectric.High frequency applications of CMOS integrated circuits, to lower cost, achieve higher performance and richer functionality, depends partly on the possibility to decrease the substrate coupling between different parts of the circuit. READ MORE
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7. Integration of Ferroelectric HfO2 onto a III-V Nanowire Platform
Abstract : The discovery of ferroelectricity in CMOS-compatible oxides, such as doped hafnium oxide, has opened new possibilities for electronics by reviving the use of ferroelectric implementations on modern technology platforms. This thesis presents the ground-up integration of ferroelectric HfO2 on a thermally sensitive III-V nanowire platform leading to the successful implementation of ferroelectric transistors (FeFETs), tunnel junctions (FTJs), and varactors for mm-wave applications. READ MORE
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8. Development of new characterization techniques for III-V nanowire devices
Abstract : This dissertation presents the new methods and techniques developed to investigate the properties of nanowires (NWs) and NW devices and the results obtained using these methods. The growth and characterization of NWs have become a large research field because NWs have been shown to improve the properties of many semiconductor applications such as transistors, solar cells, and light emitting diodes. READ MORE
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9. Low-frequency noise in high-k gate stacks with interfacial layer engineering
Abstract : The rapid progress of complementary-metal-oxide-semiconductor (CMOS) integrated circuit technology became feasible through continuous device scaling. The implementation of high-k/metal gates had a significantcontribution to this progress during the last decade. However, there are still challenges regarding the reliability of these devices. READ MORE
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10. Reaction Mechanisms and Dynamics in the Early Stage of High-κ Oxide Atomic Layer Deposition : Investigations by In Situ and Operando X-ray Photoemission Spectroscopy
Abstract : Atomic layer deposition (ALD) is an outstanding deposition technique to deposit highly conformal and uniform thin films with atomic precision. In particular, ALD of transition metal oxide layers from metal amido complexes and water finds its way in several technological fields, including green energy devices and in the semiconductor industry. READ MORE
