Search for dissertations about: "High resolution x-ray diffraction HRXRD"

Found 5 swedish dissertations containing the words High resolution x-ray diffraction HRXRD.

  2. 1. Application of SiGe(C) in high performance MOSFETs and infrared detectors

    Author : Mohammadreza Kolahdouz Esfahani; Henry Radamson; Ya-Hong Xie; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Germanium Carbon SiGeC ; Reduced Pressure Chemical Vapor Deposition RPCVD ; Epitaxy; Pattern Dependency; MOSFET; Mobility; bolometer; Quantum Well; Infrared IR Detection; Ni Silicide; High Resolution X-ray Diffraction HRXRD ; High Resolution Scanning Electron Microscopy HRSEM ; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik;

    Abstract : Epitaxially grown SiGe(C) materials have a great importance for many device applications. In these applications, (strained or relaxed) SiGe(C) layers are grown either selectively on the active areas, or on the entire wafer. READ MORE

  4. 2. Epitaxy and characterization of SiGeC layers grown by reduced pressure chemical vapor deposition

    Author : Julius Hållstedt; KTH; []
    Keywords : Silicon germanium carbon SiGeC ; Epitaxy; Chemical vapor deposition CVD ; Loading effect; High resolution x-ray diffraction HRXRD ; Hall measurements; Atomic force microscopy AFM .;

    Abstract : Heteroepitaxial SiGeC layers have attracted immenseattention as a material for high frequency devices duringrecent years. The unique properties of integrating carbon inSiGe are the additional freedom for strain and bandgapengineering as well as allowing more aggressive device designdue to the potential for increased thermal budget duringprocessing. READ MORE

  5. 3. Device design and process integration for SiGeC and Si/SOI bipolar transistors

    Author : Erik Haralson; KTH; []
    Keywords : Silicon-Germanium SiGe ; SiGeC; heterojunction bipolar transistor HBT ; nickel silicide; selectively implanted collector SIC ; device simulation; SiGeC layer staiblity; high resolution x-ray diffraction HRXRD ; silicon-on.insulator SOI ; self-heating;

    Abstract : SiGe is a significant enabling technology for therealization of integrated circuits used in high performanceoptical networks and radio frequency applications. In order tocontinue to fulfill the demands for these applications, newmaterials and device structures are needed. READ MORE

  6. 4. GaN, AlGaN, GaNAs and Related Heterostructures Grown by Molecular Beam Epitaxy

    Author : Hyonju Kim; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; surface segregation; GaNAs; plasma-assisted MBE; stacking fault; AlGaN GaN; heterointerface; unintentional impurities; III-nitrides;

    Abstract : This work deals with growth and characterization of III-nitrides and related heterostructures as well as GaNAs alloys grown by plasma assisted molecular beam epitaxy (MBE). The III-nitrides belong to the wide bandgap semiconductors due to their large energy bandgap spanning from 1.9 to 6.2 eV. READ MORE

  7. 5. Optical characterization of dilute nitride semiconductors and related quantum structures

    Author : Morteza Izadifard; G. Yu. Rudko; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Dilute nitrides; optoelectronics; photonics; Optical physics; Optisk fysik;

    Abstract : Dilute nitrides (i.e. READ MORE