Search for dissertations about: "I-V Characteristics."
Showing result 21 - 25 of 36 swedish dissertations containing the words I-V Characteristics..
-
21. Fabrication and Photoelectrochemical Applications of II-VI Semiconductor Nanomaterials
Abstract : In this work we investigated fabrication of semiconductor nanomaterials and evaluated their potential for photo-chemical and photovoltaic applications. We investigated different II-VI semiconductor nanomaterial systems; (i) ZnO oriented nanowire arrays non-epitaxially grown from a substrate; and (ii) colloidal CdE (E=Te,Se,S) quantum structures synthesized by solution-based thermal decomposition of organo-metallic precursors. READ MORE
-
22. On transport theory of correlated mesoscopic systems
Abstract : This thesis is about the theory of quantum transport through low dimensional correlated systems. Correlated systems are interacting many-particle systems where collective effects predominate over the individual properties of particles whereof they consist. Single particle approach to correlated systems would be essentially wrong. READ MORE
-
23. Metal Gate Technology for Advanced CMOS Devices
Abstract : The development and implementation of a metal gate technology (alloy, compound, or silicide) into metal-oxide-semiconductor field effect transistors (MOSFETs) is necessary to extend the life of planar CMOS devices and enable further downscaling. This thesis examines possible metal gate materials for improving the performance of the gate stack and discusses process integration as well as improved electrical and physical measurement methodologies, tested on capacitor structures and transistors. READ MORE
-
24. Multiparametric MRI for evaluation of tumour treatment response : Studies of 177Lu-octreotate therapy of neuroendocrine tumour
Abstract : Clinical assessment of tumour response to treatment largely relies on estimates of tumour size by, e.g., measuring the largest tumour diameters on magnetic resonance (MR) or computed tomography (CT) images, weeks or months after treatment. READ MORE
-
25. Cryogenic Ultra-Low Noise InP High Electron Mobility Transistors
Abstract : Indium phosphide high electron mobility transistors (InP HEMTs), are today the best transistors for cryogenic low noise amplifiers at microwave frequencies. Record noise temperatures below 2 K using InP HEMT equipped cryogenic low noise amplifiers (LNAs) were demonstrated already a decade ago. READ MORE