Search for dissertations about: "III-Nitride materials"

Showing result 1 - 5 of 23 swedish dissertations containing the words III-Nitride materials.

2. 1. Processing, Characterization and Modeling of AlGaN/GaN HEMTs

   Author : Vincent Desmaris; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN; HEMT; III-Nitride processing; microwave modeling; AlGaN GaN; HFET; heterojunction field effect transistor; microwave devices; III-Nitride; Schottky diodes; Gallium nitride; resistive mixer; high electron mobility transistor; wide bandgap;

   Abstract : III-Nitrides electronic properties make them currently the materials of choice for high-power high-frequency applications. Their wide bandgaps, high breakdown fields, the high electron peak and saturation velocities combined with the large conduction band offset and the high electron mobility observed in AlGaN/GaN heterostructures enable excellent microwave power performance of AlGaN/GaN high electron mobility transistors (HEMTs). READ MORE

4. 2. Optical Characterization of III-Nitride and II-V Semiconductor Nanowires

   Author : David Lindgren; Fasta tillståndets fysik; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; III-Nitride; III-V; Fysicumarkivet A:2014:Lindgren; Semiconductor; Nanowire; Photoluminescence; Cathodoluminescence;

   Abstract : The optical properties of III-V semiconductor nanowires for optical devices have been investigated by photoluminescence spectroscopy, cathodoluminescence spectroscopy and cathodoluminescence imaging. The material systems that have been studied include the nitrides (InN, GaN and AlN) and ternaries, and a few common phosphides and arsenides. READ MORE

5. 3. Hot-wall MOCVD of N-polar group-III nitride materials and high electron mobility transistor structures

   Author : Hengfang Zhang; Vanya Darakchieva; Jr-Tai Chen; Ingemar Persson; Fatemeh (Shadi) Shahedipour-Sandvik; Linköpings universitet; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; Nitrogen-polar; MOCVD; III-nitride; GaN; AlN; C-face SiC; HEMTs;

   Abstract : Group III-Nitride semiconductors: indium nitride (InN), gallium nitride (GaN), aluminum nitride (AlN) and their alloys continue to attract significant scientific interest due to their unique properties and diverse applications in photonic and electronic applications. Group-III nitrides have direct bandgaps which cover the entire spectral range from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN). READ MORE

6. 4. Photoluminescence Characteristics of III-Nitride Quantum Dots and Films

   Author : Martin Eriksson; Per-Olof Holtz; Peder Bergman; Fredrik Karlsson; Volodymyr Khranovskyy; Yasuhiko Arakawa; Linköpings universitet; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES;

   Abstract : III-Nitride semiconductors are very promising in both electronics and optical devices. The ability of the III-Nitride semiconductors as light emitters to span the electromagnetic spectrum from deep ultraviolet light, through the entire visible region, and into the infrared part of the spectrum, is a very important feature, making this material very important in the field of light emitting devices. READ MORE

7. 5. Strain-related structural and vibrational properties of group-III nitride layers and superlattices

   Author : Vanya Darakchieva; Oliver Ambacher; Linköpings universitet; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

   Abstract : This PhD thesis is focused on strain-related phenomena in group-III nitride layers and heterostructures. Key issues in material properties as phonon mode behavior, structure and lattice parameters of AlN, InN and GaN, as well as of AlN/GaN superlattices are addressed in order to give answers to some open questions. READ MORE