Search for dissertations about: "III-V Semiconductor Materials"

Showing result 1 - 5 of 77 swedish dissertations containing the words III-V Semiconductor Materials.

  2. 1. Adventures of III-V Semiconductor Surfaces

    Author : Sandra Benter; NanoLund: Centre for Nanoscience; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; III-V; semiconductor surfaces; Bismuth; InAs; GaAs; droplets; STM; XPS; XPEEM; ARPES; Fysicumarkivet A:2023:Benter;

    Abstract : Tailoring the surface composition and morphology of materials to enable new electronic devices is important for a wide range of applications such as quantum computing or spintronics. A fundamental understanding of the changes induced in the surface during different process steps can help to establish new synthesis routes as well as devices. READ MORE

  4. 2. In-situ Study of the Growth, Composition and Morphology of III-V Semiconductor Nanowires

    Author : Robin Sjökvist; NanoLund: Centre for Nanoscience; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; Nanowire; Semiconductor; III-V; Transmission Electron Microscopy; In-situ; Environmental TEM; Crystal growth;

    Abstract : It is widely known that nanoparticle seeded growth of III-V semiconductor nanowires often occurs via the vapor-liquid-solid mechanism. However, conventional growth of nanowires is carried out in closed systems, where mostof the details and dynamics of the growth are impossible to follow. READ MORE

  5. 3. Vertical III-V Nanowire Transistors for Low-Power Electronics

    Author : Abinaya Krishnaraja; Nanoelektronik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; metal-oxide-semiconductor field-effect transistor MOSFET ; Steep slope; Tunnel Field-Effect Transistors; Vertical nanowire; III-V materials; semiconducting III-V; InAs; GaSb; InGaAsSb; PMOS; Transistor; Electronics;

    Abstract : Power dissipation has been the major challenge in the downscaling of transistor technology. Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have struggled to keep a low power consumption while still maintaining a high performance due to the low carrier mobilities of Si but also due to their inherent minimum inverse subthreshold slope (S ≥ 60 mV/dec) which is limited by thermionic emission. READ MORE

  6. 4. Electrical Characterisation of III-V Nanowire MOSFETs

    Author : Markus Hellenbrand; Institutionen för elektro- och informationsteknik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; TFET; III-V; Nanowire; Hysteresis; Low-Frequency Noise; Random Telegraph Noise; cryogenic; Reliability; Radio Frequency; Small-Signal Model;

    Abstract : The ever increasing demand for faster and more energy-efficient electricalcomputation and communication presents severe challenges for the semiconductor industry and particularly for the metal-oxidesemiconductorfield-effect transistor (MOSFET), which is the workhorse of modern electronics. III-V materials exhibit higher carrier mobilities than the most commonly used MOSFET material Si so that the realisation of III-V MOSFETs can enable higher operation speeds and lower drive voltages than that which is possible in Si electronics. READ MORE

  7. 5. Electrical Characterization of III-V Nanostructure

    Author : Aein Shiri Babadi; Institutionen för elektro- och informationsteknik; []
    Keywords : High-κ; Metal-Oxide-Semicondcutor capacitors; MOSCAPs; III-V semiconductors; InAs; GaSb; interface traps; border traps; C-V; Simulations; Nanowire; MOSFET; Fabrication;

    Abstract : This thesis investigates the electronic properties of a number of novel III-V materials and material combinations for transistor applications. In particular, high-κ/InAs metal-oxide-semiconductor (MOS) structures and transport properties of GaSb nanowires have been studied. READ MORE