Search for dissertations about: "III-V semiconductor materials"

Showing result 11 - 15 of 77 swedish dissertations containing the words III-V semiconductor materials.

  2. 11. Integration of Ferroelectric HfO2 onto a III-V Nanowire Platform

    Author : Anton E. O. Persson; Nanoelektronik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ferroelectricity; ferroelectric FET; ferroelectric tunnel junction; tunnel field effect transistors; HZO; III-V; nanowire;

    Abstract : The discovery of ferroelectricity in CMOS-compatible oxides, such as doped hafnium oxide, has opened new possibilities for electronics by reviving the use of ferroelectric implementations on modern technology platforms. This thesis presents the ground-up integration of ferroelectric HfO2 on a thermally sensitive III-V nanowire platform leading to the successful implementation of ferroelectric transistors (FeFETs), tunnel junctions (FTJs), and varactors for mm-wave applications. READ MORE

  4. 12. Semiconductor Nanowires: Epitaxy and Applications

    Author : Thomas Mårtensson; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; semiconductor; nanotechnology; nanowires; crystal growth; metal-organic vapour phase epitaxy; III-V; silicon; MOVPE; light-emitting diode; single-electron transistor; cell;

    Abstract : Semiconductor nanowires are nanoscale objects formed by bottom-up synthesis. In recent years their unique properties have been exploited in fields such as electronics, photonics, sensors and the life sciences. In this work, the epitaxial growth of nanowires and their applications were studied. READ MORE

  5. 13. The Crystal Structure of III-V Semiconductor Nanowires: Growth and Characterization

    Author : Jessica Bolinsson; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; metal-organic vapour phase epitaxy; MOVPE; scanning tunneling microscopy; cathodoluminescence; XSTM; crystal structure; polytypism; III-V semiconductor materials; nanowires; Fysicumarkivet A:2010:Bolinsson;

    Abstract : This thesis concerns growth and characterization of gold-particle seeded nanowires of III-V semiconductor materials (III-V NWs). The nanowires were grown using metal-organic vapour phase epitaxy (MOVPE) and characterized by various microscopy techniques. READ MORE

  6. 14. Vertical III-V Nanowires For In-Memory Computing

    Author : Saketh Ram Mamidala; Nanoelektronik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; RRAM; 1T1R; gate all-around; MOSFET; III-V nanowire; In-memory computing;

    Abstract : In recent times, deep neural networks (DNNs) have demonstrated great potential in various machine learning applications,such as image classification and object detection for autonomous driving. However, increasing the accuracy of DNNsrequires scaled, faster, and more energy-efficient hardware, which is limited by the von Neumann architecture whereseparate memory and computing units lead to a bottleneck in performance. READ MORE

  7. 15. Atomic and Electronic Structure of III-V Semiconductor Surfaces

    Author : Örjan Olsson; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; semiconductor; GaAs; photoelectron; scanning tunneling microscopy; valence band; core level; reconstruction; InAs; surface; InSb;

    Abstract : The atomic and electronic structure of clean and Cs-perturbed III-V semiconductors was studied by angle-resolved photoelectron spectroscopy (ARPES), surface core level spectroscopy (SCLS), and scanning tunneling microscopy (STM). The work can be divided into three parts, dealing with low-index sur-faces, high-index surfaces, and special features of InAs. READ MORE