Search for dissertations about: "III-V semiconductor materials"

Showing result 21 - 25 of 77 swedish dissertations containing the words III-V semiconductor materials.

  1. 21. Atomic Scale Characterization of III-V Nanowire Surfaces

    Author : Johan Knutsson; NanoLund: Centre for Nanoscience; []
    Keywords : III–V semiconductor materials; nanowire; surface; scanning tunneling microscopy; wurtzite; zinc blende; scanning tunneling spectroscopy; Fysicumarkivet A:2017:Knutsson;

    Abstract : This dissertation focus on the atomic-scale characterization of the surface properties and electronic structure of III–V semiconductor nanowires (NWs). Since the early 2000s, the fabrication and characterization of III–V NWs has been a very significant topic within material science due to their potential for applications in lighting, energy harvesting, and electronics. READ MORE

  2. 22. High resolution electrical characterization of III-V materials and devices

    Author : Olivier Douheret; Srinivasan Anand; Wilfried Vandervorst; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electrical engineering; condensed matter; electrics; electrical; materials science; Elektroteknik; elektronik och fotonik; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik;

    Abstract : The continuing shrinkage of semiconductor devices towards nanoscale features and increased functionality has prompted a strong need for high-resolution characterization tools capable of mapping the electrical properties with nanoscale lateral resolution. In this regard, scanning capacitance microscopy (SCM) scanning spreading resistance microscopy (SSRM) and Kelvin probe force microscopy (KPFM) have emerged as powerful techniques. READ MORE

  3. 23. Synchrotron X-ray based characterization of technologically relevant III-V surfaces and nanostructures

    Author : Andrea Troian; NanoLund: Centre for Nanoscience; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; synchrotron radiation; III-V semiconductors; high-k oxides; passivation; doping; XPS; AP-XPS; SPEM; XRF; full field X-ray diffraction microscopy; Fysicumarkivet A:2019:Troian;

    Abstract : Innovative design and materials are needed to satisfy the demand for efficient and scalable devices for electronic and opto-electronic applications, such as transistors, LEDs, and solar cells. Nanostructured III-V semiconductors are an appealing solution, combining the excellent functional properties of III-V materials with the flexibility typical of nanostructures, such as the nanowires (NWs) studied here. READ MORE

  4. 24. Realization of Complex III-V Nanoscale Heterostructures

    Author : Sepideh Gorji; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Fysicumarkivet A:2014:Gorji Ghalamestani;

    Abstract : Low-dimensional III-V semiconductor nanoscale structures grown by epitaxial processes have emerged as a new class of materials with great promise for various device applications. This thesis describes explorations into the heteroepitaxial growth of III-V semiconductor materials in combination with other III-V materials and in combination with the commonly used Si material, in both thin layer and nanowire geometries. READ MORE

  5. 25. Dynamics of Photogenerated Charge Carriers in III-V Bulk and Nanowire Semiconductors

    Author : Xianshao Zou; NanoLund: Centre for Nanoscience; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Time-resolved spectroscopy; Group III-V semiconductor; Nanowires; Carrier recombination; Trapping; Passivation;

    Abstract : As a solution to solving energy consumption and environment problems, photovoltaics has become one type of the promising devices to convert solar energy into electricity directly. In some special areas like in space, a kind of photovoltaics with lightweight and reliable properties is needed to supply power. READ MORE