Search for dissertations about: "III-V"
Showing result 11 - 15 of 295 swedish dissertations containing the word III-V.
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11. III-V Nanowire MOSFET High-Frequency Technology Platform
Abstract : This thesis addresses the main challenges in using III-V nanowireMOSFETs for high-frequency applications by building a III-Vvertical nanowire MOSFET technology library. The initial devicelayout is designed, based on the assessment of the current III-V verticalnanowire MOSFET with state-of-the-art performance. READ MORE
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12. III-V MOSFETs for High-Frequency and Digital Applications
Abstract : III-V compound semiconductors are used in, among many other things, high-frequency electronics. They are also considered as a replacement for silicon in CMOS technology. Yet, a III-V transistor outperforming state-of-the-art silicon devices in VLSI-relevant metrics has not yet decisively been demonstrated. READ MORE
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13. Transmission Electron Microscopy of III-V Nanowires and Nanotrees
Abstract : In this work, the morphology and crystal structure of epitaxial semiconductor nanowire structures grown by metal-organic vapour phase epitaxy (MOVPE) are studied by electron microscopy methods. In particular, the three-dimensional structure of nanowires and nanotrees has been characterised by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM) and multi-slice (MS) simulations. READ MORE
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14. Tailoring the Optical Response of III-V Nanowire Arrays
Abstract : Semiconductor nanowires show a great deal of promise for applications in a wide range of important fields, including photovoltaics, biomedicine, and information technology. Developing these exciting applications is strongly dependent on understanding the fundamental properties of nanowires, such as their optical resonances and absorption spectra. READ MORE
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15. Vertical III-V Nanowire Tunnel Field-Effect Transistor
Abstract : In this thesis fabrication and optimization of vertical III-V Tunneling Field-Effect transistors was explored. Usage of vertical nanowires, allows for combination of materials with large lattice mismatch in the same nanowire structure. READ MORE
