Search for dissertations about: "III-V"
Showing result 21 - 25 of 295 swedish dissertations containing the word III-V.
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21. Surface modification of III-V nanostructures studied by low-temperature scanning tunneling microscopy
Abstract : In the past decade, driven by the demand for materials with high performance for next-generation semiconductor devices (e.g. READ MORE
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22. Fabrication of Low-Dimensional Structures in III-V Semiconductors
Abstract : The thesis presents studies on the processing technology and the characterization of nanometer-sized and low-dimensional structures in III-V semiconductors. Two major approaches are described: 1) the combination of aerosol technology and plasma etching for the fabrication of quantum dots (QDs) in InP-based materials and 2) the use of high-resolution electron beam lithography and plasma or wet chemical etching to make quantum well wires (QWWs) in both GaAs and InP-based structures. READ MORE
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23. Zeeman Interaction in Low-Dimensional III-V Semiconductor Structures
Abstract : The Zeeman interaction in low-dimensional III-V semiconductor nanostructures is studied. The effective g-value of bulk InGaAs is measured by two different spin resonance techniques. Experimental conditions were found to control the Overhauser effect, thus enabling a highly accurate determination of the g-value, g* = -4.070 ± 0. READ MORE
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24. In-situ Study of the Growth, Composition and Morphology of III-V Semiconductor Nanowires
Abstract : It is widely known that nanoparticle seeded growth of III-V semiconductor nanowires often occurs via the vapor-liquid-solid mechanism. However, conventional growth of nanowires is carried out in closed systems, where mostof the details and dynamics of the growth are impossible to follow. READ MORE
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25. Surfaces and interfaces of low dimensional III-V semiconductor devices
Abstract : The demand for fast and energy efficient (opto-)electronic applications needs high mobility semiconductor materials, such as InAs with a very high electron mobility and GaSb with a very high hole mobility. Beyond the material itself, also an innovative device geometry is needed, for example, the gate-all-around geometry that provides higher efficiency and electrostatic control for computational units. READ MORE