Search for dissertations about: "INP"

Showing result 1 - 5 of 181 swedish dissertations containing the word INP.

2. 1. Spectroscopic studies of III-V semiconductors in two, one and zero dimensions

   Author : Dan Hessman; Fasta tillståndets fysik; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; InAs-InP; low-dimensional structures; quantum wells; quantum dots; quantum wires; k.p calculations; type-II; photoluminescence; V grooves; Stranski Krastanow; single dot spectroscopy; GaAs-InP; III-V semiconductors; Fysicumarkivet A:1996:Hessman; InAs-GaAs; GaInAs-InP; Halvledarfysik; InP-GaInP; Semiconductory physics;

   Abstract : In this thesis, spectroscopic studies of quantum wells (QWs), quantum wires (QWRs) and quantum dots (QDs) in III-V semiconductors are presented. The electronic structure of these low-dimensional structures have been studied by absorption, photocurrent, electroreflectance, photoluminescence (PL), and photoluminescence excitation (PLE) spectroscopy. READ MORE

4. 2. Photoluminescence Studies of Polytype Heterostructured InP Nanostructures

   Author : Asmita Jash; NanoLund: Centre for Nanoscience; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; III-V semiconductor; Photoluminescence; time-resolved photoluminescence TRPL ; polytype; crystal phase heterostructure; InP; wurtzite WZ ; zincblende; Indirect Exciton;

   Abstract : The interface between two semiconductors significantly influences their optical and electronic properties. In contrast to traditional material heterostructures, polytype heterostructures between wurtzite (wz) and zincblende (zb) segments in homomaterial InP nanostructures exhibit sharp interfaces with minimal strain. READ MORE

5. 3. Ion beam etching of InP based materials

   Author : Carl-Fredrik Carlström; KTH; []
   Keywords : InP; dry etching; ion beam etching; RIBE; CAIBE; hydrocarbon chemistry; trimethylamine; As P exchange reaction; morphology; low damage; AFM; SCM; annealing;

   Abstract : Dry etching is an important technique for pattern transferin fabrication of most opto-electronic devices, since it canprovide good control of both structure size and shape even on asub-micron scale. Unfortunately, this process step may causedamage to the material which is detrimental to deviceperformance. READ MORE

6. 4. InP based Micromechanics for Vertical-Cavity Micro-Opto-Electro-Mechanical Systems

   Author : Martin Strassner; KTH; []
   Keywords : MOEMS; vertical-cavity; InP; DBR; epitaxy; semiconductor processing; micromechanics; wavelength tunable devices; long-wavelength;

   Abstract : During the past decade, the amount of transmitted data hasbeen boosted due to an increasing use of the World Wide Web(WWW), video and audio transmissions. In the late 90s, thetraditional technology using twisted copper cables was nolonger capable to provide enough transmission capacity for theconstantly increasing data traffic. READ MORE

7. 5. InP DHBT Amplifiers and Circuit Packaging up to Submillimeter-Wave Frequencies

   Author : Klas Eriksson; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; InP; WR05; packaging; noise figure; substrate modes; WR03.; multiple layer interconnect; double heterojunction bipolar transistor DHBT ; G-band; wideband; H-band; waveguide transition; distributed amplifier DA ; millimeter-wave; amplifier; low-noise amplifier LNA ; membrane technology; waveguide module; submillimeter-wave;

   Abstract : This thesis treats the design and characterization of amplifiers operating up tosubmillimeter-wave frequencies and packaging of such circuits into waveguidemodules. The circuits use an advanced indium phosphide (InP) double heterojunctionbipolar transistor (DHBT) process with a multilayer back-end. READ MORE