Search for dissertations about: "Impurities on 2D materials"

Found 4 swedish dissertations containing the words Impurities on 2D materials.

  1. 1. Influence of defects and impurities on the properties of 2D materials

    Author : Soumyajyoti Haldar; Biplab Sanyal; Olle Eriksson; Torbjörn Björkman; Uppsala universitet; []
    Keywords : NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURVETENSKAP; NATURAL SCIENCES; 2D Materials; Defects on 2D materials; Impurities on 2D materials; Physics with spec. in Atomic; Molecular and Condensed Matter Physics; Fysik med inriktning mot atom- molekyl- och kondenserande materiens fysik;

    Abstract : Graphene, the thinnest material with a stable 2D structure, is a potential alternative for silicon-based electronics. However, zero band gap of graphene causes a poor on-off ratio of current thus making it unsuitable for logic operations. This problem prompted scientists to find other suitable 2D materials. READ MORE

  2. 2. Three Dimensional Determinations of Inclusions in Ferroalloys and Steel Samples

    Author : Yanyan Bi; Andrey Karasev; Chris Pistorius; KTH; []
    Keywords : ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Three dimensional; Ferroalloy; Inclusion; Spinel inclusion; T hermodynamic calculation; REM clusters; Formation mechanism; Statistical analysis; Maximum size;

    Abstract : As the requirements on material properties increase, there has been a demand on an additional knowledge on the effect of impurities in the ferroalloyson the steel cleanness. Thus, the number, morphology, size and composition of inclusions in sixdifferent ferroalloys (FeTi, FeNb, FeSi,SiMn, LC and HC FeCr) were investigatedin this study. READ MORE

  3. 3. Effects of impurities on charge transport in graphene field-effect transistors

    Author : Marlene Bonmann; Chalmers University of Technology; []
    Keywords : carrier transport; electron and hole mobility; impurities; traps; graphene; field-effect transistors; microwave devices; saturation velocity; remote phonons;

    Abstract : In order to push the upper frequency limit of high speed electronics further, thereby extending the range of applications, new device technologies and materials are continuously investigated. The 2D material graphene, with its intrinsically extremely high room temperature charge carrier velocity, is regarded as a promising candidate to push the frequency limit even further. READ MORE

  4. 4. Graphene field-effect transistors and devices for advanced high-frequency applications

    Author : Marlene Bonmann; Chalmers University of Technology; []
    Keywords : traps; graphene; self-heating; field-effect transistors; remote phonons; carrier transport; saturation velocity; microwave devices; impurities and defects;

    Abstract : New device technologies and materials are continuously investigated, in order to increase the bandwidth of high-speed electronics, thereby extending data rate and range of applications. The 2D-material graphene, with its intrinsically extremely high charge carrier velocity, is considered as a promising new channel material for advanced high frequency field-effect transistors. READ MORE