Search for dissertations about: "In-situ etching"
Showing result 26 - 27 of 27 swedish dissertations containing the words In-situ etching.
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26. Characterization of Process-related Defects in Silicon Carbide by Electron Microscopy
Abstract : Silicon carbide (SiC) is a semiconducting material, which provides advantages compared to other available semiconducting materials. Attractive properties of SiC are the wide bandgap (2.2-3.3 eV), high electric breakdown field (3x106 Vcm-1), high thermal conductivity (5 Wcm-1 K-1) and the chemical stabi!ity. READ MORE
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27. Growth and characterization of SiC and GaN
Abstract : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. READ MORE