Search for dissertations about: "InAs-InP"
Showing result 1 - 5 of 21 swedish dissertations containing the word InAs-InP.
-
1. Optical Studies of InAs Quantum Dots in III-V Semiconductors
Abstract : I this thesis, optical studies of InAs quantum dots (QDs) in GaAs and InP are presented. The electronic structure of these zero dimensional structures, grown in the Stranski-Krastanow growth mode, was studied by photoluminescence spectroscopy (PL), junction space-charge techniques (JSCT) and photoconductivity (PC) measurements. READ MORE
-
2. Spectroscopic studies of III-V semiconductors in two, one and zero dimensions
Abstract : In this thesis, spectroscopic studies of quantum wells (QWs), quantum wires (QWRs) and quantum dots (QDs) in III-V semiconductors are presented. The electronic structure of these low-dimensional structures have been studied by absorption, photocurrent, electroreflectance, photoluminescence (PL), and photoluminescence excitation (PLE) spectroscopy. READ MORE
-
3. Strain and Charge Transport in InAsP-InP and InP-InAs Core-Shell Nanowires
Abstract : The mechanical, optical, and electrical properties of III-V semiconductor heterostructures are investigated in thisthesis. The semiconductor materials are grown by metal-organic vapor phase epitaxy, yielding wire shaped crystals(nanowires) having a length of ~ 1 μm and diameter of ~ 100 nm. READ MORE
-
4. Epitaxial Growth, Processing and Characterization of Semiconductor Nanostructures
Abstract : This thesis deals with the growth, processing and characterization of nano-sized structures, eg., self-assembled quantum dots and nano-wires. READ MORE
-
5. Studies of Novel Nanostructures by Cross- sectional Scanning Tunneling Microscopy
Abstract : This thesis presents structural and morphological studies of semiconductor nanostructures, namely quantum dots, nanowires and a dilute ferromagnetic semiconductor. These nanostructures are investigated on the atomic scale using cross-sectional scanning tunneling microscopy (XSTM). READ MORE