Search for dissertations about: "InAs"

Showing result 1 - 5 of 93 swedish dissertations containing the word InAs.

  1. 1. InAs Nanowire Devices and Circuits

    University dissertation from Electrical and Information Technology, Lund University

    Author : Kristofer Jansson; Lunds universitet.; Lund University.; [2015]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Modelling; Circuit; Simulation; Ballistic; Capacitor; Transistor; RF; Band structure; III-V semiconductor; InAs; MOSFET; Metal-oxide-semiconductor field-effect transistor; Nanowire; Amplifier;

    Abstract : Popular Abstract in Swedish Sedan introduktionen av transistorn och den integrerade kretsen har teknologin inom halvledarindustrin utvecklats i en mycket hög takt. Genom att bygga allt mindre och snabbare transistorer har en exponentiell förbättring av prestanda bibehållits sedan 1960-talet, ett fenomen känt som Moores Lag. READ MORE

  2. 2. Electrical Characterization of Integrated InAs Nano-Structures

    University dissertation from Lund University (Media-Tryck)

    Author : Gvidas Astromskas; Lunds universitet.; Lund University.; Lunds universitet.; Lund University.; [2010]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; DLTS; Fermi level pinning; epitaxial growth; threshold voltage; nanowire capacitance; overgrowth; Hall mobility; GaSb; InAs;

    Abstract : This thesis analyzes the electrical properties of InAs nano-structures, that are integrated into different materials and geometries. The thesis describes integration related issues of InAs, the epitaxial synthesis of the InAs nano-structures and summarizes experimental techniques for analysis of electrical properties of the integrated structures. READ MORE

  3. 3. Vertical InAs Nanowire Devices and RF Circuits

    University dissertation from Lund University

    Author : Martin Berg; Lunds universitet.; Lund University.; [2015]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; Metal-oxide-semiconductor field-effect transistor; Transistor; Vertical; InAs; III-V semiconductor; Nanowire; Fabrication; DC; Resistor; TLM; RF; Mixer; Circuit.;

    Abstract : Popular Abstract in Swedish Under de senaste årtiondena har prestandan i elektriska kretsar växt i en rasande takt. Detta har lett till otaliga innovationer som har förbättrat samhället. Grunden till denna utveckling grundar sig i två uppfinningar: transistorn och den integrerade kresten. READ MORE

  4. 4. Growth, Physics, and Device Applications of InAs-based Nanowires

    University dissertation from Solid State Physics, Lund University

    Author : Linus Fröberg; Lunds universitet.; Lund University.; [2008]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; field effect transistors; Low-dimensional structures; nanowires; chemical beam epitaxy; heterostructures; III-V; InP; InAs; quantum dots; gate all-around; wrap gate;

    Abstract : This thesis is based on three different projects: 1) the epitaxial growth of nanowires using chemical beam epitaxy, 2) the study of electron transport through quantum dots and multiple quantum dots in nanowires at low temperature, and 3) the development of wrap gated nanowire field effect transistors. In the first part, a method of studying the diffusion of the source material on the substrate surface was developed. READ MORE

  5. 5. Optical Studies of InAs Quantum Dots in III-V Semiconductors

    University dissertation from Solid State Physics, Lund University

    Author : Lars Landin; Lunds universitet.; Lund University.; [2000]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; quantum dots; III-V semiconductors; k.p calculations; photoluminescence; deep-level transient spectroscopy; photoconductivity; few particle effect; single dot spectroscopy; InAs InP; Semiconductory physics; Halvledarfysik; Fysicumarkivet A:2000:Landin; InAs GaAs;

    Abstract : I this thesis, optical studies of InAs quantum dots (QDs) in GaAs and InP are presented. The electronic structure of these zero dimensional structures, grown in the Stranski-Krastanow growth mode, was studied by photoluminescence spectroscopy (PL), junction space-charge techniques (JSCT) and photoconductivity (PC) measurements. READ MORE