Search for dissertations about: "InGaAs InP 2DEG"

Found 4 swedish dissertations containing the words InGaAs InP 2DEG.

  2. 1. Linear and Nonlinear Transport in Quantum Nanostructures

    Author : Anneli Löfgren; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; magnetoconductance; mesoscopic; electron billiard; quantum dot; quantum ratchets; non-linear; symmetries; non-symmetric conduction; rectification; artificial material; Halvledarfysik; Fysicumarkivet A:2002:Löfgren; ballistic transport; quantum transport; 2DEG; Semiconductory physics; InP InGaAs; GaAs AlGaAs;

    Abstract : In this thesis, electron transport in mesoscopic semiconductor nanostructures, in particular so-called electron billiards or quantum dots, is studied. The thesis can be divided into two areas: the linear response regime of transport, and the nonlinear response regime of transport. READ MORE

  4. 2. Semiconductor Nanoelectronic Devices Based on Ballistic and Quantum Effects

    Author : Jie Sun; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Semiconductor; Quantum Dots; Ballistic Transport; InGaAs InP 2DEG; Nanoelectronics;

    Abstract : As current silicon-based microelectronic devices and circuits are approaching their fundamental limits, the research field of nanoelectronics is emerging worldwide. With this background, the present thesis focuses on semiconductor nanoelectronic devices based on ballistic and quantum effects. The main material studied was a modulation doped In0. READ MORE

  5. 3. Theoretical and optical investigations of some III-V based quantum wells and modulation doped heterostructures

    Author : Thomas Lundström; Maurice S. Skolnick; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : This thesis is based on a combination of theoretical calculations and optical studies of the electronic structure and the radiative recombination processes in some III-V based quantum wells and ?-type modulation doped heterostructures. The optical studies includes photoluminescence (PL) spectroscopy, PL excitation (PLE) spectroscopy, and time-resolved PL. READ MORE

  6. 4. Charge carrier transport in field-effect transistors with two-dimensional electron gas channels studied using geometrical magnetoresistance effect

    Author : Isabel Harrysson Rodrigues; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; low-field mobility; high-electron-mobility transistor; velocity saturation; quasi-ballistic charge carrier transport; two-dimensional electron gas; charge carrier scattering mechanisms; geometrical magnetoresistance; low noise and high frequency applications; velocity peak; graphene field-effect transistor; charge carrier trans- port;

    Abstract : During the last decades, significant efforts have been made to exploit the excellent and promising electronic properties exhibited by field-effect transistors (FETs) with two-dimensional electron gas (2DEG) channels. The most prominent representatives of this class of devices are high-electron-mobility transistors (HEMTs) and graphene field-effect transistors (GFETs). READ MORE