Search for dissertations about: "InGaAs"

Showing result 1 - 5 of 49 swedish dissertations containing the word InGaAs.

  1. 1. Scaling of InGaAs/InAlAs and InAs/AlSb HEMTs for microwave/mm-wave applications

    Author : Malin Borg; [2007]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; metamorphic; InGaAs; gate length; pseudomorphic; InAs; AlSb; InP; Schottky layer; High electron mobility transistor HEMT ; drain bias;

    Abstract : The InGaAs/InAlAs high electron mobility transistor (HEMT) offers the highest maximum frequency of oscillation fmax and the lowest noise performance (NFmin) for microwave/mm-wave receivers. Similar to other device technologies, the performance of the InGaAs/InAlAs HEMT has gradually been improved by device scaling. READ MORE

  2. 2. Novel Terahertz Emitters and Detectors: InGaAs Slot Diodes and InAs Self-Switching Diodes

    Author : Andreas Westlund; [2013]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; InAs; InGaAs; slot diode; self-switching diode; zero-bias diode;

    Abstract : Two novel types of diodes for emission and detection of THz radiation have been investigated. The diodes are based on high electron mobility III-V heterostructures. Both diodes are aimed for room-temperature operation, for which there is a demand for new THz technology. For emission, slot diodes based on an InGaAs heterostructure were studied. READ MORE

  3. 3. Self-Switching Diodes for Zero-Bias Terahertz Detection

    Author : Andreas Westlund; [2015]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; self-switching diode; noise-equivalent power; SSD; graphene; zero-bias; InAs; InGaAs; terahertz; detector;

    Abstract : The self-switching diode (SSD) has been investigated as a potential terahertz detector in recent years. The SSD accomplishes a non-linear current-voltage relation through a field-effect, which enables detection at zero bias from microwave up to terahertz frequencies. In this work, SSDs were realised in two new materials; InAs and graphene. READ MORE

  4. 4. Vertical III-V/High-k Nanowire MOS Capacitors and Transistors

    University dissertation from Department of Electrical and Information Technology, Lund University

    Author : Jun Wu; Lunds universitet.; Lund University.; [2016]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; MOS capacitor; C-V; XPS; MOVPE; InGaAs; InAs; High-k; RF; Track-and-hold circuit;

    Abstract : Popular Abstract in English Since 1947 when the first transistor was invented, electronics was transited into an unprecedented era. Different from a resistor that only has two terminals with the applied voltage and flowing current always obeying Ohm's law, a transistor has the third terminal in between, called "gate", which is made by, for metal-oxide-semiconductor field effect transistors (MOSFETs), an oxide layer sandwiched between the metal electrode and the semiconductor channel. READ MORE

  5. 5. RF and Noise Optimization of Pseudomorphic inP HEMT Technology

    University dissertation from Department of Electrical and Information Technology, Lund University

    Author : Mikael Malmkvist; [2006]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; fabrication; high electron mobility transistor HEMT ; optimization; Schottky layer; InAlAs; Indium phosphide InP ; MMIC.; noise; pseudomorphic; modeling; InGaAs;

    Abstract : The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the electronic device utilized for the highest frequency and/or the lowest noise applications known to date for analog transistor-based circuits. Hence it is of both scientific and technological interest to explore the InP HEMT for even further improvement in device performance. READ MORE