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Showing result 1 - 5 of 74 swedish dissertations matching the above criteria.
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1. InGaAs Nanowire and Quantum Well Devices
Abstract : To fulfill the increasing demand for high-speed electronics used for computation or communication is one everlasting challenge for the semiconductor industry. Emerging fields such as quantum computation also has a need for circuits operating at cryogenic temperatures. READ MORE
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2. Radio Frequency InGaAs MOSFETs
Abstract : III-V-based Indium gallium arsenide is a promising channel material for high-frequency applications due to its superior electron mobility property. In this thesis, InGaAs/InP heterostructure radio frequency MOSFETs are designed, fabricated, and characterized. READ MORE
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3. Scaling of InGaAs/InAlAs and InAs/AlSb HEMTs for microwave/mm-wave applications
Abstract : The InGaAs/InAlAs high electron mobility transistor (HEMT) offers the highest maximum frequency of oscillation fmax and the lowest noise performance (NFmin) for microwave/mm-wave receivers. Similar to other device technologies, the performance of the InGaAs/InAlAs HEMT has gradually been improved by device scaling. READ MORE
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4. Novel Terahertz Emitters and Detectors: InGaAs Slot Diodes and InAs Self-Switching Diodes
Abstract : Two novel types of diodes for emission and detection of THz radiation have been investigated. The diodes are based on high electron mobility III-V heterostructures. Both diodes are aimed for room-temperature operation, for which there is a demand for new THz technology. For emission, slot diodes based on an InGaAs heterostructure were studied. READ MORE
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5. Self-Switching Diodes for Zero-Bias Terahertz Detection
Abstract : The self-switching diode (SSD) has been investigated as a potential terahertz detector in recent years. The SSD accomplishes a non-linear current-voltage relation through a field-effect, which enables detection at zero bias from microwave up to terahertz frequencies. In this work, SSDs were realised in two new materials; InAs and graphene. READ MORE